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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC39V7785A_04 MGFC39V7785A
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| OCR Text |
...lly designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metalceramic package guarantees high reliability.
OUTLINE DRA...8W (TYP.) @ f=7.7~8.5GHz High power gain GLP = 7.5 dB (TYP.) @ f=7.7~8.5GHz High power added efficie... |
| Description |
7.7 ~ 8.5GHz BAND 8W INTERNALLY MATchED GaAs FET
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| File Size |
180.17K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC39V5964A_04 MGFC39V5964A MGFC39V5964A04
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| OCR Text |
5.9 ~ 6.4GHz BAND 8W INTERNALLY MATchED GaAs FET DESCRIPTION
The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guar... |
| Description |
5.9 - 6.4GHz BAND 8W INTERNALLY MATchED GaAs FET
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| File Size |
180.02K /
2 Page |
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it Online |
Download Datasheet |
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Raytheon Company
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| Part No. |
RC5041M RC5041
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| OCR Text |
...tion.
65-5041-01
Rev. 0.9.5
PRELIMINARY INFORMATION describes products that are not in full production at the time of printing. Spe...8W, 5%, SMT0805 10 Resistor, 1/8W, 5%, SMT0805 10 Resistor, 1/8W, 5%, SMT0805 10 Resistor, 1/8W, 5%,... |
| Description |
Programmable DC-DC Converter for Pentium P55C, K6 and 6x86MX (M2) Processors 可编程DC - DC转换为奔腾P55C，K6x86MX量（M2）处理器
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| File Size |
117.66K /
16 Page |
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it Online |
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Price and Availability
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