36.0v pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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36.0v Datasheet PDF File

For 36.0v Found Datasheets File :: 878 Search Time::6.875ms
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				IRF[International Rectifier]
Part No.	IRFBC20L IRFBC20S
OCR Text	...-20V 18 I D = 2.0A 3.0 nC VDS = 360V 8.9 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- I D = 2.0A ns --- R G = 18 --- RD = 150, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 350 --- VGS = 0V 48 --- pF VDS = 25V 8.6 --- ...
Description	Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A) Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	351.70K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTA32N60E2
OCR Text	...ons temperature. 2. VCE(PEAK) = 360V, TC = +125oC, RGE = 25. INTERSIL IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,9...
Description	32A/ 600V N-Channel IGBT 32A, 600V N-Channel IGBT 32A 600V N-Channel IGBT
File Size	31.61K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG12N60B3
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = -10mA, VGE = 0V VCE = 600V TC = 25o...
Description	27A, 600V, UFS Series N-Channel IGBTs
File Size	199.68K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG32N60E2
OCR Text	...ion temperature. 2. VCE(PEAK) = 360V, TC = +125oC, RGE = 25. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587...
Description	32A/ 600V N-Channel IGBT 32A, 600V N-Channel IGBT
File Size	32.99K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRAMS10UP60A
OCR Text	...TJ=150C, VP =600V, R G =33, V +=360V, VDD =+15V to 0V See CT2 Thermal Resistance Symbol R th(J-C) Param e t e r Junction to case thermal resistance, each IGBT under inv e rter operation. Junction to case thermal resistance, each Diod...
Description	Plug N DriveTM Integrated Power Module for Appliance Motor Drive
File Size	273.70K / 18 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC30S IRFBC30L
OCR Text	...-20V 31 I D = 3.6A 4.6 nC VDS = 360V 17 VGS = 10V, See Fig. 6 and 13 --- VDD = 300V --- I D = 3.6A ns --- R G = 12 --- RD =82, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 660 --- VGS = 0V 86 --- pF VDS = 25V 19 --- = 1...
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
File Size	358.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40MD2
OCR Text	....65 -- mJ 2.4 3.6 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 10, VCPK < 500V 28 -- TJ = 150C, 37 -- ns IC = 24A, V CC = 480V 380 -- VGE = 15V, R G = 10 460 -- Energy losses include "tail" and 4.5 -- mJ diode reverse recovery. 13 -- nH ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A)
File Size	69.27K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40M
OCR Text	....65 -- mJ 2.4 3.6 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 10, VCPK < 500V 28 -- TJ = 150C 37 -- ns IC = 24A, V CC = 480V 380 -- VGE = 15V, R G = 10 460 -- Energy losses include "tail" 4.5 -- mJ 13 -- nH Measured 5mm from package 150...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
File Size	67.76K / 2 Page	View it Online	Download Datasheet

				PANASONIC CORP PANASONIC[Panasonic Semiconductor]
Part No.	2SK2123
OCR Text	... 150V, RL = 50 Conditions VDS = 360V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 700 VDS = 20V, VGS = 0, f = 1MHz 100 40 25 45 35 80 2.5 2 450 2 1 2.5 -1.2 5 1.3 ...
Description	Silicon N-Channel Power F-MOS FET
File Size	45.56K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFDC20
OCR Text	...18 ID = 2.0A -- -- 3.0 nC VDS = 360V -- -- 8.9 VGS = 10V -- 10 -- VDD = 300V -- 23 -- ID = 2.0A ns -- 30 -- RG = 18 -- 25 -- RD = 150 -- 4.0 -- Between lead, 6mm (0.25in.) -- 6.0 -- from package nH and center of die contact -- 350 -- VGS = ...
Description	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)
File Size	418.01K / 8 Page	View it Online	Download Datasheet

For 36.0v Found Datasheets File :: 878 Search Time::6.875ms
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