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33mh Datasheet PDF File

For 33mh Found Datasheets File :: 1004 Search Time::2.969ms
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				Taiwan Semiconductor Company, Ltd
Part No.	TSM85N10
OCR Text	...finition : 1. gate 2. drain 3. source tsm 85n10 100v n-channel power mosfet ...
Description	100V N-Channel Power MOSFET
File Size	57.19K / 4 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,...
Part No.	SSFD3004
OCR Text	... gs ds on characteristics (note 3) gate threshold voltage v v =v gs(th) ds gs ,i d =250 a 1 1.8 2.5 v v =4.5v, i gs d =20a 7.5...3mh rg =50 ? , ias = 50a, vgs =10v. part not recommended for use above this value ?silikron semic...
Description	High Power and current handing capability
File Size	265.84K / 7 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	TSM75N75
OCR Text	... 56 t a =25c 2 t a =70c 1.3 storage temperature range t stg -55 to +150 c operating junction temperature range t j -55 to +150 c * limited by maximum junction temperature thermal performance parameter symbol limi...
Description	75V N-Channel Power MOSFET
File Size	57.08K / 4 Page	View it Online	Download Datasheet

				Kersemi Electronic Co.,...
Part No.	IRF530NL IRF530NS
OCR Text	... @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 70 w linear derating factor 0.47 w/c v gs gate-to-source voltage ...3mh r g = 25 ? , i as = 9.0a, v gs =10v (see figure 12) i sd 9.0a di/d 410a/s,...
Description	Ultra Low On-Resistance
File Size	1,539.84K / 10 Page	View it Online	Download Datasheet

				RENCO ELECTRONICS INC
Part No.	RL-1123-.22000.2 RL-1123-.00180.2 RL-1124-1.50.2
OCR Text	...7 2.7 h .009 1.4 rl-1123-.0033 3.3 h .009 1.4 rl-1123-.0039 3.9 h .009 1.4 rl-1123-.0047 4.7 h .012 1.4 rl-1123-.0056 5.6 h .012 1.4 rl...3mh .295 1.12 rl-1123-3.9 3.9mh .287 .88 rl-1123-4.7 4.7mh .364 .88 rl-1123-5.6 5.6mh .440 .707 rl-1...
Description	1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
File Size	107.23K / 3 Page	View it Online	Download Datasheet

				Murata Manufacturing Co., Ltd.
Part No.	PLY10AN1521R6R2B PLY10AN4420R8D2B PLY10AN1121R7D2B PLY10AN1121R8R2B PLY10AN1130R5D2B PLY10AN1421R4D2B PLY10AN2121R4R2B PLY10AN2321R2D2B PLY10AN2821R2R2B PLY10AN4321R0R2B PLY10AN3521R0D2B PLY10AN6220R8R2B PLY10AN7012R0D2B PLY10AN8720R7D2B PLY10AN9012R0R2B PLY10AN9920R6R2B PLY10AN9720R6D2B PLY10AN1430R5R2B PLY10AN8720R7R2B
OCR Text	...100.5 16 max. ?0.9 max. (in mm) 3.51 (4) [(1)] (3) [(2)] (4) [(3)] (1) [(2)] c common mode insertion loss-frequency characteristics 0.1 1 ...3mh 300h 1.0a 300vac ply10an6220r8r2 p 6.2mh 400h 0.8a 300vac ply10an8720r7r2 p 8.7mh 530h 0.7a 300v...
Description	AC Line Filters Hybrid Choke Coils
File Size	85.94K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530NPBF
OCR Text	3/16/01 parameter typ. max. units r q jc junction-to-case CCC 2.15 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-t...3mh r g = 25 w , i as = 9.0a, v gs =10v (see figure 12) ? repetitive rating; pulse width li...
Description	100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	216.84K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STGB20NB37LZ
OCR Text	...ng junction temperature 150 c 1 3 d2pak internal schematic diagram stgb20nb37lz 2/9 thermal data electrical characteristics (tcase = 25 c ...3mh,tc=25c 21.6 26 a r goff =1k w , l = 3mh ,tc=150c 15 18 a symbol parameter test conditions min. t...
Description	N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
File Size	397.83K / 9 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	TSM210N06 TSM210N06CZ
OCR Text	...ds(on) (m ? ) i d (a) 60 3.1 @ v gs =10v 210 features advanced trench technology low r ds(on) 3.1m ? (max.) ...3mh i as , i ar 113 a avalanche energy, l=0.3mh e as , e ar 1900 mj maximum power dissipat...
Description	60V N-Channel Power MOSFET
File Size	57.14K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530NS IRF530NSTRRPBF
OCR Text	... @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 70 w linear derating factor 0.47 w/c v gs gate-to-source voltage ...3mh r g = 25 ? , i as = 9.0a, v gs =10v (see figure 12) i sd 9.0a di/d 410a/s,...
Description	Advanced Process Technology
File Size	276.14K / 11 Page	View it Online	Download Datasheet

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