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  3-300s Datasheet PDF File

For 3-300s Found Datasheets File :: 11767    Search Time::1.907ms    
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    DIODES[Diodes Incorporated]
Part No. BAS70JW-7-F BAS70JW_1 BAS70JW
OCR Text ... Lead Free/RoHS Compliant (Note 3) BC A SOT-363 Dim A B C D F M Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2...300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

File Size 63.96K  /  3 Page

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    BAS70JW

DIODES[Diodes Incorporated]
Part No. BAS70JW
OCR Text ...n 0.10 1.15 2.00 0.30 1.80 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Ca...300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = ...
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

File Size 52.48K  /  1 Page

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    APM2055NU APM2055NUC-TRL APM2055NUC-TU APM2055NUC-TUL APM2055NUC-TR

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ANPEC[Anpec Electronics Coropration]
Part No. APM2055NU APM2055NUC-TRL APM2055NUC-TU APM2055NUC-TUL APM2055NUC-TR
OCR Text ... ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 1 www.anpec.com.tw APM2055NU Absolute Maximum Ratings Symbol Parameter Rating 20 16 150 ...300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistanc...
Description N-Channel Enhancement Mode MOSFET

File Size 182.02K  /  10 Page

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    VN10KN3-P013-G VN10KN3-G VN10KN3-P002 VN10KN3-P002-G VN10KN3-P003 VN10KN3-P003-G VN10KN3-P014 VN10KN3-P014-G

Supertex, Inc
Part No. VN10KN3-P013-G VN10KN3-G VN10KN3-P002 VN10KN3-P002-G VN10KN3-P003 VN10KN3-P003-G VN10KN3-P014 VN10KN3-P014-G
OCR Text ...n v gs(th) with temperature - -3.8 - mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 15v, v ds = 0v i dss ze...300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. notes: ? i d (continuous) is ...
Description N-Channel Enhancement-Mode Vertical DMOS FET

File Size 522.68K  /  6 Page

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    APM2512NUC-TU APM2512NU APM2512NUC-TR APM2512NUC-TUL APM2512NUC-TRL

ANPEC[Anpec Electronics Coropration]
Part No. APM2512NUC-TU APM2512NU APM2512NUC-TR APM2512NUC-TUL APM2512NUC-TRL
OCR Text ...DS=15V, Frequency=1.0MHz 9 13 1.3 1.8 25 1 30 2.5 100 12 20 V A V nA m RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSD a Diode Forward Voltage 0.9 1.3 V pF Dynamic Characteristics b RG Ciss Coss Crss...
Description N-Channel Enhancement Mode MOSFET

File Size 202.25K  /  11 Page

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    IRGS15B60KD IRGSL15B60KD IRGB15B60KD

IRF[International Rectifier]
Part No. IRGS15B60KD IRGSL15B60KD IRGB15B60KD
OCR Text ...eff. of Breakdown Voltage --- 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 --- 2.05 --- 2.10 Gate Threshold Voltage 3.5 4.5 Temperat...300s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 300s 100 90 80 70 ICE (A) 60...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 322.37K  /  16 Page

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    ZXMC3A16DN8TC ZXMC3A16DN8TA ZXMC3A16DN8_05 ZXMC3A16DN8 ZXMC3A16DN805

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZXMC3A16DN8TC ZXMC3A16DN8TA ZXMC3A16DN8_05 ZXMC3A16DN8 ZXMC3A16DN805
OCR Text ... P-Channel 30 20 6.4 5.1 4.9 30 3.4 30 1.25 10 1.8 14 2.1 17 -55 to +150 -30 20 -5.4 -4.3 -4.1 -25 -3.2 -25 UNIT V V A A A A A A W mW/C W...300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active di...
Description 4900 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
   COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

File Size 305.34K  /  10 Page

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    APM2505NU APM2505NUC-TR APM2505NUC-TRL APM2505NUC-TU APM2505NUC-TUL

Anpec Electronics Coropration
Part No. APM2505NU APM2505NUC-TR APM2505NUC-TRL APM2505NUC-TU APM2505NUC-TUL
OCR Text ...ode Forward Voltage 0.8 1.3 V pF Dynamic Characteristicsb Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time b 1.3 4...
Description N-Channel Enhancement Mode MOSFET

File Size 181.12K  /  10 Page

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