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POLYFET[Polyfet RF Devices]
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Part No. |
SM706
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OCR Text |
... Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Vol...120w = 72%
25
Gain
10
Crss
0 0 2 4 6 8 10 12 14 16 18 20 9 10 0 5 10
Pin in Watts
V... |
Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
35.71K /
2 Page |
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it Online |
Download Datasheet
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POLYFET[Polyfet RF Devices]
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Part No. |
SM341
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OCR Text |
... Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 125 V Drain to Source Vo...120w
P1dB = 200W
Pout
12.5 12.0
100
Coss
120
Gain
80 Efficiency = 55% 40 11.5 11.0... |
Description |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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File Size |
35.10K /
2 Page |
View
it Online |
Download Datasheet
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
L6561D013TR L656104 L6561D L6561
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OCR Text |
...1)
0.45 1.6
0.6 1.7 -0.05 200 0 2.1
0.75 1.8 -1 450 15
1/V V A ns mV V
CURRENT SENSE COMPARATOR
ZERO CURRENT DETECTOR
0...120w, 220VAC)
D1 BYT13-600 C6 T R7 (*) 998K C3 1F 68K 5 2 1 7 4
+
Vo=400V Po=120w
R3 (*) 440... |
Description |
POWER FACTOR CORRECTOR
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File Size |
160.68K /
13 Page |
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it Online |
Download Datasheet
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Price and Availability
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