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  2.8 0.5 Datasheet PDF File

For 2.8 0.5 Found Datasheets File :: 574954    Search Time::10.063ms    
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    UN Semiconducctor INC
Part No. SMDAXXC-8
OCR Text ... rohs compliant u iec61000-4-2 (esd) 30kv (air), 30kv (contact) - 5v, 12v, 15v u iec61000-4-2 (esd) 15kv (air), 8kv (contact) ...8/20 s) u microprocessor based equipment u rs-232 and rs-422 data lines u lan/wan equ...
Description Transient Voltage Suppressors Array for ESD Protection

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    EIC1415A-8

Excelics Semiconductor, Inc.
Part No. EIC1415A-8
OCR Text ...odulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f = 15.4GHz Saturated Drain Current VDS = 3 V...8 ISSUED DATE: 09/06/2007 14.40-15.40GHz 8-Watt Internally-Matched Power FET PACKAGES OUTLINE...
Description 14.40-15.40GHz 8-Watt Internally-Matched Power FET

File Size 115.68K  /  2 Page

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    EIC1414-8

Excelics Semiconductor, Inc.
Part No. EIC1414-8
OCR Text ...ff Voltage Thermal Resistance3 2) S.C.L. = Single Carrier Level. Caution! ESD sensitive device. MIN 38.5 4.0 TYP 39.0 5.0 MAX UNITS dBm dB 0.6 24 2300 4000 -2.5 3.5 2600 5000 -4.0 4.0 o dB % mA mA V C/W f = 14.0-14...
Description 14.0-14.5 GHz 8-Watt Internally Matched Power FET

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    EIC1011-8

Excelics Semiconductor, Inc.
Part No. EIC1011-8
OCR Text ...odulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f =11.7GHz Saturated Drain Current VDS = 3 V,...8 UPDATED 08/21/2007 10.70-11.70GHz 8-Watt Internally Matched Power FET PACKAGES OUTLINE Dim...
Description 10.70-11.70GHz 8-Watt Internally Matched Power FET

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    EIC1010A-8

Excelics Semiconductor, Inc.
Part No. EIC1010A-8
OCR Text ...odulation Distortion f = 10 MHz 2-Tone Test; Pout = 28 dBm S.C.L2 VDS = 9 V, IDSQ 65% IDSS f = 10.25 GHz Saturated Drain Current Pinch-off ...8 UPDATED 07/20/2005 10.00-10.25 GHz 8-Watt Internally Matched Power FET PERFORMANCE DATA Ty...
Description 10.00-10.25 GHz 8-Watt Internally Matched Power FET

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    EIC1010-8

Excelics Semiconductor, Inc.
Part No. EIC1010-8
OCR Text ...5 7.0 0.6 31 2300 -43 -46 4000 -2.5 3.5 3) Overall Rth depends on case mounting. PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 10.00-10.70GHz VDS = 10 V, IDSQ 2200mA Gain at 1dB Compression f = 10.00-10.70GHz VDS = 10...
Description 10.00-10.70 GHz 8-Watt Internally Matched Power FET

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    EID1314A1-8

Excelics Semiconductor, Inc.
Part No. EID1314A1-8
OCR Text ...YP 39.5 6.5 0.6 27 2800 4200 -1.2 3.5 3600 5760 -2.5 4.0 o MAX UNITS dBm dB dB % mA mA V C/W Notes: 1. Tested with 100 Ohm gate re...8 UPDATED 07/12/2007 13.75-14.50 GHz 8-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 1...
Description 13.75-14.50 GHz 8-Watt Internally-Matched Power FET

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    EID1112A1-8

Excelics Semiconductor, Inc.
Part No. EID1112A1-8
OCR Text ...YP 39.5 8.0 0.6 35 2800 4400 -1.2 3.5 3200 5200 -2.5 4.0 o MAX UNITS dBm dB dB % mA mA V C/W P1dB G1dB G PAE Id1dB IDSS VP RTH f = 11.70-12.70GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 mA Notes: 1. Tested with 100 Ohm g...
Description 11.70-12.70 GHz 8-Watt Internally Matched Power FET

File Size 82.32K  /  2 Page

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    DR350-8-103 DR350-8-104 DR350-8-122 DR350-8-153 DR350-8-154 DR350-8-223 DR350-8-224 DR350-8-272 DR350-8-333 DR350-8-392

Datatronic Distribution, Inc.
Part No. DR350-8-103 DR350-8-104 DR350-8-122 DR350-8-153 DR350-8-154 DR350-8-223 DR350-8-224 DR350-8-272 DR350-8-333 DR350-8-392 DR350-8-473 DR350-8-562 DR350-8-682 DR350-8-683
OCR Text ...54 DR350-8-224 Inductance (H) 1.2 30% 2.7 30% 3.9 30% 5.6 30% 6.8 30% 10.0 20% 15.0 20% 22.0 20% 33.0 20% 47.0 20% 68.0 20% 100.0 20% 150.0 20% 220.0 20% DCR (m) Max. 8.28 11.28 12.48 13.92 15.72 18.72 22.08 31.56 47.40 63.36 ...
Description SHIELDED SMD INDUCTOR

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    LHRF9UG3392-P1-PF-TBS-8

LIGITEK electronics co., ltd.
Part No. LHRF9UG3392-P1-PF-TBS-8
OCR Text ... +-+ 9UG HRF + 1 2 + 3 T 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE RED LHRF9UG3392/PF-PF 5.0 5.9 7.6 8.6 10.50.5 1.5 MAX 0.5 TYP 18.0MIN 1 2 3 9UG HRF 2.0MIN 2.0MIN 2.54TYP 2.54TYP + 1 2 + ...
Description DURL COLOR LED LAMPS

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