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INFINEON[Infineon Technologies AG]
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| Part No. |
SPU30N03S2L-10
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| OCR Text |
...esistance
VGS =10V, ID =30A
1current limited by bondwire; with a R thJC = 1.8 K/W the chip is able to carry I D = 64A and calculated with max. source pin temperature of 85C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, ... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 10.0mOhm, 30A, LL
OptiMOS Power-Transistor
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| File Size |
544.13K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPB80N06S2L-05 SPP80N06S2L-05 SPI80N06S2L-05
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| OCR Text |
...GS=10V, I D=80A, SMD version
1current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 173A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80 A; 55V; LL; 4,8 mOhm
OptiMOS Power-Transistor
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| File Size |
415.36K /
8 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05
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| OCR Text |
...GS=10V, I D=55A, SMD version
1current limited by bondwire ; with an RthJC = 0.9K/W the chip is able to carry ID= 139A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not s... |
| Description |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
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| File Size |
412.68K /
8 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4003-A5 Q67040-S4003-A6 Q67040-S4003-A2 BUZ111SE3045 BUZ111SE3045A BUZ111S BUZ111SE3046
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| OCR Text |
...nce
VGS = 10 V, ID = 80 A
1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BU... |
| Description |
N-Channel SIPMOS Power Transistor
80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
101.80K /
8 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
Infineon Technologies AG
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| Part No. |
IPB80P03P3L-04 IPI80P03P3L-04 IPP80P03P3L-04
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| OCR Text |
... SMD version
RDS(on)
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1current limited by bondwire ; with an R thJC = 0.75K/W the chip is able to carry ID= 171A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Device on 40mm*40mm*1.... |
| Description |
OptiMOS-P Power-Transistor
80 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
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| File Size |
223.00K /
4 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD50N06S2-14
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| OCR Text |
...esistance
V GS=10V, I D=32A
1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 67A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - DPAK; 50 A; 55V; NL; 14.4 mOhm
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| File Size |
268.98K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD50N06S2L-13
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| OCR Text |
...esistance
V GS=10V, I D=34A
1current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 72A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not su... |
| Description |
Low Voltage MOSFETs - DPAK; 50 A; 55V; LL; 12.7 mOhm
OptiMOS Power-Transistor
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| File Size |
264.31K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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