| |
|
 |
WESTCODE SEMICONDUCTORS LTD
|
| Part No. |
MDD810-12N1
|
| OCR Text |
...peak off-state voltage 1) 1300-1900 v v rrm repetitive peak reverse voltage 1) 1200-1800 v v rsm non-repetitive peak reverse voltage 1) 1...2000 a v v t0 threshold voltage - - 0.78 v r t slope resistance - - 0.23 m ? i rrm peak reverse curr... |
| Description |
1342 A, 1200 V, SILICON, RECTIFIER DIODE
|
| File Size |
324.71K /
9 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ANAREN INC
|
| Part No. |
XC1900A-20PR XC1900A-20ST
|
| OCR Text |
... 1700 1750 1800 1850 1900 1950 2000 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 frequency (mhz) return loss (db) return loss for xc1900a-20 (feeding port 1) - 55oc 25oc 95oc 1700 1750 1800 1850 1900 1950 2000 -50 -45 -40 -35 -30... |
| Description |
1700 MHz - 2000 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.15 dB INSERTION LOSS-MAX
|
| File Size |
1,198.75K /
23 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
|
| OCR Text |
...90 80 70 60 50 40 30 20 10 1880 1900 0 0 1 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 2 3 4 Pin, INPUT POWER (WATTS) 5 6 h Pout
60 55 , DRAIN...2000 2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB) Gps -4
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.... |
| Description |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs RF POWER FIELD EFFECT TRANSISTORS
|
| File Size |
399.98K /
8 Page |
View
it Online |
Download Datasheet
|
| |
|
 |

Motorola, Inc. MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
|
| OCR Text |
...40 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS)
90 80 70 60 50 40 30 20 10 ...2000 2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB)
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 ... |
| Description |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes RF Power Field Effect Transistors
|
| File Size |
486.59K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|