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  125-600a Datasheet PDF File

For 125-600a Found Datasheets File :: 1103    Search Time::2.063ms    
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    Mitsubishi Electric Corporation
Part No. CM600HU-24H
OCR Text ...torage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 vol...600a, v ge = 15v, t j = 25 c C 2.9 3.7 volts i c = 600a, v ge = 15v, t j = 125 c C 2.85 C vol...
Description IGBT Modules:1200V

File Size 46.22K  /  4 Page

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    PDMB300B12C

Nihon Inter Electronics Corporation
Part No. PDMB300B12C
OCR Text ...00 600 1600 -40 to +150 -40 to +125 2500 3 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temp...600A/s Min. - Max. 2.4 0.3 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic T...
Description IGBT MODULE Dual 300A 1200V

File Size 115.21K  /  3 Page

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    Mitsubishi Electric Corporation
Part No. CM600HU-12H
OCR Text ...torage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volt...600a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 600a, v ge = 15v, t j = 125 c C 2.6 C volt...
Description IGBT Modules: 600V

File Size 46.74K  /  4 Page

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    2MBI600VD-060-50

Fuji Electric
Part No. 2MBI600VD-060-50
OCR Text ... t jop 150 case temperature t c 125 storage temperature tstg -40 ~ +125 isolation voltage between terminal and copper base (*1) v iso ac : 1...600a tj=25c - 1.85 2.30 v tj=125c - 2.15 - tj=150c 2.35 v ce (sat) (chip) tj=25c - 1.60 2.05 t...
Description IGBT MODULE (V series) 600V / 600A / 2 in one package

File Size 315.13K  /  6 Page

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    SEMIX904GB126HDS08

Semikron International
Part No. SEMIX904GB126HDS08
OCR Text ...00 3600 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 60s 4000 V A A A V s C A A A A C A C V Conditions Values Unit SEMiX(R)4s ...600A VGE = 15V chiplevel Tj = 25C Tj = 125C Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 5 Tj = 2...
Description Trench IGBT Modules

File Size 184.58K  /  5 Page

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    Infineon
Part No. SIDC03D120H6
OCR Text ...t=600a/ m s v r = 600v t j =125 c 1.3 c di rr1 /dt t j = 25 c tbd peak rate of fall of reverse re covery current di rr2 /dt i f =3a di/dt=600a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 c...
Description Diodes - HV Chips - SIDC03D120H6, 1200V, 3A

File Size 67.76K  /  4 Page

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    Infineon
Part No. SIDC10D120H6
OCR Text ...t=600a/ m s v r = 600v t j =125 c 3.4 c di rr1 /dt t j = 25 c tbd peak rate of fall of reverse recovery current di rr2 /dt i f =15a di/dt=600a/ m s v r = 600v t j =125 c a/ m s s1 t j =25 ...
Description Diodes - HV Chips - SIDC10D120H6, 1200V, 15A

File Size 81.46K  /  4 Page

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    FF600R16KF4

eupec GmbH
Part No. FF600R16KF4
OCR Text ...,008 C/W 0,016 C/W 150 C -40...+125 C -40...+125 C Al2O3 Mechanische Eigenschaften / Mechanical properties Anzugsdrehmoment f. mech. Befestigung / mounting torque Anzugsdrehmoment f. elektr. Anschlusse / terminal connection torque M1...
Description Maximum rated values / Electrical properties

File Size 170.24K  /  5 Page

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    http://
Part No. SEMIX854GB176HDS10
OCR Text ... 20 v v ces 1700 v t j = 125 c 10 s t j -55 ... 150 c inverse diode i f t j = 150 c t c =25c 740 a t c =80c 496 a i fnom 600 a i frm ...600a v ge =15v chiplevel t j =25c 22.45v t j = 125 c 2.45 2.9 v v ce0 t j =25c 11.2v t j = 125 c 0.9...
Description Trench IGBT Modules

File Size 146.03K  /  5 Page

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