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  11.001 Datasheet PDF File

For 11.001 Found Datasheets File :: 47373    Search Time::1.766ms    
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    DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49

DYNEX[Dynex Semiconductor]
Part No. DS1109SG47 DS1109SG46 DS1109SG50 DS1109SG DS1109SG45 DS1109SG48 DS1109SG49
OCR Text ...150oC VR = 0 Max. 9.2 422 x 103 11.5 660 x 103 Units kA A2s kA A2s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side c...001 0.001 0.01 Cycles at 50Hz Duration 0.1 Time - (s) 1.0 10 Fig.6 Surge (non-repe...
Description Rectifier Diode

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    DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60

DYNEX[Dynex Semiconductor]
Part No. DS1112SG57 DS1112SG DS1112SG55 DS1112SG56 DS1112SG58 DS1112SG59 DS1112SG60
OCR Text ...rature range Clamping force -55 11.5 150 175 13.5 o Min. dc Anode dc - Max. 0.032 0.064 0.064 0.008 0.016 160 Units o C/W o...001 0.001 0.01 0.1 Time - (s) 1.0 10 Fig.6 Maximum (limit) transient thermal impedanc...
Description Rectifier Diode

File Size 94.33K  /  7 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ... Schottky diode. Features * 11.5 A, 30 V. RDS(ON) = 0.011 @ VGS = 10 V RDS(ON) = 0.016 @ VGS = 4.5 V * * * Includes SyncFET Scho...001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.25mA Forward Transconductance -- 136 -- S VCE = 25V, IC = 100A Collector-to-Em...001 0.01 0.1 1 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c) Fig. 6 - Maximu...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 1.5mA Forward Transconductance -- 170 -- S VCE = 25V, IC = 125A Collector-to-Em...001 0.01 0.1 1 10 100 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Ma...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    GA50TS120U

IRF[International Rectifier]
Part No. GA50TS120U
OCR Text ...Coeff. of Threshold Voltage -- -11 -- mV/C VCE = 6.0V, IC = 500A Forward Transconductance -- 72 -- S VCE = 25V, I C = 50A Collector-to-Emit...001 0.01 0.1 1 t 1 , R ecta ngu la r Pulse D u ration (se c) Fig. 6 - Maximum Effecti...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 208.85K  /  10 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ...0 -- 6.0 VCE = 6.0V, IC = 750A -11 -- mV/C VCE = 6.0V, IC = 750A VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- gfe Forward Transcond...001 0.01 0.1 1 10 100 t 1 , R e ctan gula r Pulse D uratio n (se c) Fig. 6 - Ma...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    H21A5 H21A4 H21A6

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. H21A5 H21A4 H21A6
OCR Text 11.6) C L 0.249 (6.35) 0.243 (6.15) + E D + H21A5 H21A6 O 0.133 (3.4) O 0.126 (3.2) (2X) C L 0.39 (1.00) 0.34 (0.85) 0.755 (...001 1K 2K 3K 4K 5K 6K 7K 8K 9K 10K .0001 0 2 4 6 8 1...
Description PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

File Size 100.71K  /  4 Page

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    HCPL-0710 HCPL-0710500

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. HCPL-0710 HCPL-0710500
OCR Text ... 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 T = 145C, 1C/SEC T = 115C, 0.3C/SEC TEMPERATURE - C T = 100C, 1.5C/SEC TIME - MINUTES (NOTE: USE OF NON-CHLORINE ACTIVATED FLUXES IS RECOMMENDED.) Regulatory Information The HCPL-0710 has b...
Description 40 ns Prop. Delay, SO-8 Optocoupler

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...junction temperature. (See fig. 11) Starting TJ = 25C, L = 260H RG = 25, IAS = 50A, VGS =10V (See Figure 12) ISD 50A, di/dt 230A/s, VDD ...001 P DM t1 t2 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effect...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

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