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  100a Datasheet PDF File

For 100a Found Datasheets File :: 33597    Search Time::1.531ms    
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    BUK7240-100A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7240-100a
OCR Text 100a TrenchMOSTM standard level FET Rev. 01 -- 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM1 technology, featuring very low on-sta...
Description TrenchMOS standard level FET
TrenchMOS TM standard level FET
TrenchMOS⑩ standard level FET

File Size 106.46K  /  13 Page

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    BUK553-100A BUK553-100B BUK553-100A/B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK553-100a BUK553-100B BUK553-100a/B
OCR Text ...itching applications. BUK553-100a/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V ...
Description TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 52.23K  /  7 Page

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    BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK9628-100A118

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK9628-100a BUK9528-100a NXPSEMICONDUCTORS-BUK9628-100a118
OCR Text ...tching applications. BUK9528-100a BUK9628-100a QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V...
Description TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET

File Size 71.78K  /  9 Page

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    BUK581-100A

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK581-100a
OCR Text ...itching applications. BUK581-100a QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 ...
Description PowerMOS transistor Logic level FET 0.9 A, 100 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 54.56K  /  8 Page

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    BUK562-100A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK562-100a
OCR Text ...itching applications. BUK562-100a QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 ...
Description PowerMOS transistor Logic level FET

File Size 74.54K  /  7 Page

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    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK481-100a
OCR Text 100a GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. ...
Description PowerMOS transistor 1 A, 100 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 70.71K  /  8 Page

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    BUK472-100A BUK472-100B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BUK472-100a BUK472-100B
OCR Text 100a/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters...
Description PowerMOS transistor Isolated version of BUK452-100a/B 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

File Size 55.10K  /  7 Page

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    BUK473-100A BUK473-100B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BUK473-100a BUK473-100B
OCR Text 100a/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters...
Description    PowerMOS transistor Isolated version of BUK453-100a/B
PowerMOS transistor Isolated version of BUK453-100a/B 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

File Size 55.83K  /  7 Page

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    BUK7660-100A BUK7560-100A BUK7560_7660_100A-01

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7660-100a BUK7560-100a BUK7560_7660_100a-01
OCR Text 100a; BUK7660-100a TrenchMOSTM standard level FET Rev. 01 -- 22 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring v...
Description From old datasheet system
TrenchMOS standard level FET
TrenchMOS(tm) standard level FET

File Size 128.25K  /  15 Page

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    BUK462-100A

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK462-100a
OCR Text 100a GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, weldi...
Description PowerMOS transistor 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 55.41K  /  7 Page

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