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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S824BTL
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OCR Text |
...e currents (i/o) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c , f = 1mhz, v ref = 1.4v 200mv. - ac operating condition is changed as defined : v ih (max) = 5.6v ac. the overshoot voltage durati... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
143.42K /
13 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S803BTL
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OCR Text |
...e currents (i/o) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c , f = 1mhz, v ref = 1.4v 200mv. - ac operating condition is changed as defined : v ih (max) = 5.6v ac. the overshoot voltage durati... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
142.45K /
13 Page |
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it Online |
Download Datasheet
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BSI
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Part No. |
BS616LV8013
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OCR Text |
... 25mA (@70ns) operating current 1.5ua (Typ.) CMOS standby current * High speed access time : -55 -70 * Automatic power down when chip is deselected * Three state outputs and TTL compatible * Fully static operation * Data retention supply vo... |
Description |
Asynchronous 8M(512Kx16) bits Static RAM From old datasheet system
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File Size |
252.22K /
8 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S824BT
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OCR Text |
... 1ua, i il (dq) : 5ua to 1.5ua. - cin to be measured at v dd = 3.3v, t a = 23 c, f = 1mhz, v ref =1.4v 200 mv. revision .1 (march 1998) ? some parameter values & characteristics of comp. level are changed as below : - ac... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
152.83K /
13 Page |
View
it Online |
Download Datasheet
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