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| Part No. |
M30260M3A-XXXGP M30260F3TGP
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| OCR Text |
...scribed below. *1 blank: set to 0 or 1 acco rding to the application. 0: set to 0. 1: set to 1. x: nothing is assigned. *2 rw: read and writ...26a, m16c/26b (normal version) ................................................................ 261 ... |
| Description |
16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48
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| File Size |
2,648.99K /
352 Page |
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ADVANCED POWER ELECTRONICS CORP
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| Part No. |
AP4435GH AP4435GJ
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| OCR Text |
...rrent, v gs @ 10v -30 + 20 -40 0.36 continuous drain current, v gs @ 10v -25 pulsed drain current 1 -150 parameter total power dissipation...26a - - 20 m ? v gs =-4.5v, i d =-16a - - 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-... |
| Description |
40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
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| File Size |
212.62K /
6 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSS87
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| OCR Text |
0
BSS87
SIPMOS O Small-Signal-Transistor
Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated
Product Summary VDS RD...26A, V DS=192V, di/dt=200A/s, Tjmax=150C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD... |
| Description |
SIPMOS Small-Signal-Transistor
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| File Size |
185.87K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50H14FT3G
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| OCR Text |
...0 -40 -40 -40 2.5
Typ
Max 0.60 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature R...26A 12 T =25C J V =250V
DS
Ciss Coss
10 8 6 4 2 0 0 20 40 60 Gate Charge (nC) 80 100
VDS=400... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
298.06K /
6 Page |
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it Online |
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