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0.20-0.08ma Datasheet PDF File

For 0.20-0.08ma Found Datasheets File :: 51 Search Time::1.828ms
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					VISHAY SEMICONDUCTORS
Part No.	DF02MA-E3 VISHAYSEMICONDUCTORS-DF01MA-E3
OCR Text	... case: dfm epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solder- able per j-std-002b and jesd22...20 40 60 80 100 120 140 150 0 0.5 1.0 average forward output current (a) ambient temperature (c) 60 ...
Description	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
File Size	184.48K / 4 Page	View it Online	Download Datasheet

					Leshan Radio Company
Part No.	L2SA1235FLT1G L2SA1235FLT3G
OCR Text	... voltage. vce(sat) =-0.3v max excellent linearity of dc forward current gain. super mini package for easy mounting applica...20 db item item 150300 250500 400800 2 1 3 rev.o 1/3 leshan radio company, ltd. l2s...
Description	General Purpose Transistor Super mini package for easy mounting
File Size	893.10K / 3 Page	View it Online	Download Datasheet

					Isahaya Electronics Corporation
Part No.	ISA1235AC1 ISA1602AM1 ISA1602AM113
OCR Text	...r saturation voltage vce(sat)=-0.3vmax isa1235ac1 isa1602am1 application for small type machine low freq...20 db e f fe 150300 250500 marking m f . hfe item *it shows hfe classifica tion in belo...
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
File Size	186.86K / 5 Page	View it Online	Download Datasheet

					Isahaya Electronics Corporation Isahaya Electronics Corpora...
Part No.	ISA1530AC1 ISA1530AC113 ISA1603AM1 ISA1603AM113
OCR Text	...r saturation voltage vce(sat)=-0.3vmax isa1530ac1 isa1603am1 application for small type machine low freq...20 db symbol parameter ratings unit isa1530ac1 isa1603am1 collector to base voltage -60 v...
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
File Size	162.02K / 4 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PG-TO220-3-FP IKA08N65F5
OCR Text	...limitedby t vjmax i cpuls 24.0 a turnoffsafeoperatingarea v ce 650v, t vj 175c - 24.0 a diodeforwardcurrent,limitedby ...20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 31.2 15.6 w operating jun...
Description	High speed 5 FAST IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode
File Size	2,450.43K / 17 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PG-TO220-3-FP IKA08N65H5
OCR Text	...limitedby t vjmax i cpuls 24.0 a turnoffsafeoperatingarea v ce 650v, t vj 175c - 24.0 a diodeforwardcurrent,limitedby ...20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 31.2 15.6 w operating jun...
Description	High speed 5 IGBT in TRENCHSTOP 5 technology copacked with RAPID 1 fast and soft anti parallel diode
File Size	2,451.11K / 17 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	PG-TO220-3 IKP08N65F5
OCR Text	...x t c =25c t c =100c i c 18.0 11.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 24.0 a turnoffsafeoperatingarea v ...20.0 12.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 24.0 a gate-emitter voltage tran...
Description	650V DuoPack IGBT and Diode High speed switching series fifth generation
File Size	2,438.00K / 17 Page	View it Online	Download Datasheet

					Lite-On Technology
Part No.	LTH1650-01
OCR Text	...eters (inches). 2.tolerance is 0.25 mm (.010"). 3.lead spacing is measured where the leads emerge from the package. 4.specifications are su...20 100 30 5 -25 to + 85 -40 to + 100 260 for 5 seconds unit ma v a mw ma mw v v parameter input l...
Description	(LTHxxx-01) Reflective Photointerrupters
File Size	350.43K / 4 Page	View it Online	Download Datasheet

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