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Solid States Devices, Inc. SSDI[Solid States Devices, Inc]
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Part No. |
SSR2010Z SSR2008M SSR2008Z SSR2009M SSR2009Z SSR2010M
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OCR Text |
...
80 90 100 20 300 -65 to +175 1.0
Unit
Volts Amps Amps
Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current 1/ 3/ (Resistive Load, 60 Hz, Sine Wave, TC = 25C) Peak Surge Current 3/ (8.3 ms Pulse... |
Description |
20 AMPS 100 VOLTS CHOTTKY RECTIFER
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File Size |
52.02K /
2 Page |
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SSDI[Solid States Devices, Inc]
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Part No. |
SSR2010
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OCR Text |
...
-65 to +175
C
RJC
0.8
C/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0081D
DOC
Solid State Devic... |
Description |
20 AMP 100 VOLTS SCHOTTKY RECTIFIER
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File Size |
121.66K /
2 Page |
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it Online |
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SSDI[Solid States Devices, Inc]
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Part No. |
SSR2045CTJ
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OCR Text |
...her)
Symbol
RJC
Value
2.0
Units
o
C/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0044A
DOC
SSR2045CTJ
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Description |
20 AMPS 45 VOLTS ISOLATED FLAT PACK POSITIVE CENTER TAP SCHOTTKY
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File Size |
108.55K /
2 Page |
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SSDI[Solid States Devices, Inc]
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Part No. |
SSR8045CT_3 SSR8045CT-3 SSR8045CT/3
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OCR Text |
...
TOP & Tstg RJC
-65 TO +175 0.7
o
o
C
C/W
NOTES: 1/ Both Legs Tied Together. For Doubler configuration ratings shall be: Io = 40A per Leg and IFSM = 300A per Leg. All Electrical Characteristics @25oC, Unless Otherwise Speci... |
Description |
80AMPS 45 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER
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File Size |
33.39K /
2 Page |
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SSDI[Solid States Devices, Inc]
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Part No. |
SSR8045CTP
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OCR Text |
...g RJE
45 80 1200 -65 to +175 0.5 1.0
Volts Amps Amps C C/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0065G
DOC
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Description |
80A 45 V SCHOTTKY CENTERTAP RECTIFIER
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File Size |
100.33K /
2 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
SSRU1N60A
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OCR Text |
...VDSS = 600 V RDS(on) = 12 ID = 0.9 A
D-PAK
2 1 3 1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current ... |
Description |
Advanced Power MOSFET
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File Size |
256.48K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
SSS6N90A
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OCR Text |
...
24 + 30 _ 649 3.5 5 1.5 50 0.4 - 55 to +150
O 1 O 1 O 3 O
2
C
300
Thermal Resistance
Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.5 62.5 Units
C/W
Rev. B
(c)1999 Fairchil... |
Description |
Advanced Power MOSFET
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File Size |
263.00K /
7 Page |
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it Online |
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Seoul Semicondutctor Inc. SEOUL[Seoul Semiconductor]
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Part No. |
SST-4T5
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OCR Text |
...mA RL = 100 VCE0 =5V EV=2000Lux 0.5 7 0.1 mA S nm 0.4 V
Tr/ Tf P VCE(S)
-
10/10 880
-
0.1
SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keum Chun-Gu, Seoul, Korea TEL: 82-2-3281-6269 2 FAX: 82-2-858-5537
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Description |
Photo Transistors
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File Size |
200.14K /
2 Page |
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it Online |
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Price and Availability
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