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MBR2020 E003509 Z13CP X2P1346 MICROS LC170A 1C330 HRPF0100
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    2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA

SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
Part No. 2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
OCR Text ...45B [2SA2044 / 2SC5710] 6.5 5.0 4 Relay drivers, lamp drivers, motor drivers, strobes. Features * * * * * Adoption of FBET and M...60 80 100 120 Ambient Temperature, Ta -- C 40 60 80 100 120 140 160 IT030...
Description Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...60 250 90 Max -100 -100 500 -0.2 -1.1 ns V V pF Unit nA nA V 1 2001-10-29 2SA2056 Ma...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collec...
Description Silicon PNP epitaxial planar type

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns ...60 -40 Common emitter Ta = 25C Single nonrepetitive pulse -20 10000 Common emitter VCE = -2 V Single...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...60 1000 10000 Common emitter VCE = -2 V Single nonrepetitive pulse hFE - IC -5 (A) hFE ...
Description SILICON PNP EPITAXIAL TYPE

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...60 50 40 30 1000 Ta = 100C 25 -55 Collector current -3 20 15 IB = 10 mA DC current...
Description Silicon PNP Epitaxial Type

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...60 35 (10)15 (280)140 1.5 (-0.3)0.2 (--)2.0 MHz pF V V V V V s s s 160 Unit mA mA Any and all SAN...
Description 140V / 10A, AF70W Output Applications

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collec...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...10.00.2 1.00.2 5.00.1 C 1.0 2.250.2 0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1 Absolute Maximum Ratings ...60 -60 -6 -3 -6 15 2.0 150 -55 to +150 C C Unit V V V A A W 1 : Base 2 : Collector 3 : Emitter MT...
Description Silicon PNP epitaxial planar type

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns ...60 280 70 Max -100 -100 500 -0.20 -1.10 ns V V pF Unit nA nA V 1 2004-07-07 2SA2070 ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

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