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For write-protection Found Datasheets File :: 18017    Search Time::1.109ms    
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...in.)* *K9F5616Q0C : 60ns * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable C...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...e Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable C...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable C...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable C...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Reliable C...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    LM75DM-33R2 LM75DM-50R2 ON0319 LM75

ONSEMI[ON Semiconductor]
Part No. LM75DM-33R2 LM75DM-50R2 ON0319 LM75
OCR Text ...t in the Address Byte is a Read-Write Bit. This bit is a 1 for a read operation or 0 for a write operation. Acknowledge (ACK) Stop ACK Acknowledge (ACK) provides a positive handshake between the host and the LM75. The host release...
Description 2-Wire Serial Temperature Sensor and Monitor DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 3Cel, SQUARE, SURFACE MOUNT
From old datasheet system

File Size 150.47K  /  12 Page

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    MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MA

Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX800 MAX800L MAX800LCPE MAX800LCSE MAX800LEPE MAX800LESE MAX800M MAX800MCPE MAX800MCSE MAX800MEPE MAX800MESE MAX691 MAX691A MAX691AC MAX691ACPE MAX691ACSE MAX691ACWE MAX691AD MAX691AEJE MAX691AEPE MAX691AESE MAX691AEWE MAX691AMJE MAX693A MAX693AC MAX693ACPE MAX693ACSE MAX693ACWE MAX693AD MAX693AEJE MAX693AEPE MAX693AESE MAX693AEWE MAX693AMJE
OCR Text ...agation delay. Features include write protection of CMOS RAM or EEPROM, separate watchdog outputs, backup-battery switchover, and a RESET output that is valid with VCC down to 1V. The MAX691A/ MAX800L have a 4.65V typical reset-threshold vo...
Description Microprocessor Supervisory Circuits
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:800V; Current, It av:500A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes

File Size 155.34K  /  16 Page

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    MAX801 MAX801CPA MAX801CSA MAX801EPA MAX801ESA MAX801MJA MAX801L MAX801L-MAX808N MAX808 MAX808CPA MAX808CSA MAX808EPA MA

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX801 MAX801CPA MAX801CSA MAX801EPA MAX801ESA MAX801MJA MAX801L MAX801L-MAX808N MAX808 MAX808CPA MAX808CSA MAX808EPA MAX808ESA MAX808MJA 1421 MAX801LCPA MAX801NCPA MAX808LCPA MAX801LCSA MAX801LEPA MAX801LESA MAX801LMJA MAX801MCPA MAX801MCSA MAX801MEPA MAX801MESA MAX801MMJA MAX801NCSA MAX801NEPA MAX801NESA MAX801NMJA MAX808LCSA MAX808MCSA MAX808NCSA MAX808LESA MAX808LEPA MAX808LMJA MAX808MCPA MAX808MEPA MAX808MESA MAX808MMJA MAX808NCPA MAX808NEPA MAX808NESA MAX808NMJA MAX801N
OCR Text ...dog for the MAX801 and CMOS RAM write protection for the MAX808. The MAX801/MAX808 offer a choice of reset-threshold voltage (denoted by suffix letter): 4.675V (L), 4.575V (N), and 4.425V (M). These devices are available in 8-pin DIP and SO...
Description Supervisory circuit with -1.5% reset accuracy. Reset threshold(typ) 4.425V. Watchdog.
Supervisory circuit with -1.5% reset accuracy. Reset threshold(typ) 4.675V. Watchdog.
Supervisory circuit with -1.5% reset accuracy. Reset threshold(typ) 4.575V. CMOS RAM write protection..
8-Pin µP Supervisory Circuits with ±1.5% Reset Accuracy
8-Pin µP Supervisory Circuits with ±1.5% Reset Accuracy
8-Pin μP Supervisory Circuits with ±1.5eset Accuracy
8-Pin P Supervisory Circuits with 1.5eset Accuracy
From old datasheet system
8-Pin レP Supervisory Circuits with 【1.5eset Accuracy
5015 RR 3#8 SKT RECP
8-Pin レP Supervisory Circuits with 1.5eset Accuracy 8引脚レP监控电路与精度1.5eset
8-Pin レP Supervisory Circuits with 1.5eset Accuracy 8引脚微处理器监控电路,提amp;plusmn;1.5%的复位门限精
Interface IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, CDIP8
Supervisory circuit with -1.5% reset accuracy. Reset threshold(typ) 4.575V. Watchdog.
Supervisory circuit with -1.5% reset accuracy. Reset threshold(typ) 4.675V. CMOS RAM write protection..

File Size 90.14K  /  12 Page

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    MAX807 MAX807CPE MAX807CWE MAX807EPE MAX807EWE MAX807MJE MAX807L MAX807N MAX807NCPE MAX807LMJE MAX807NEWE MAX807NEPE MAX

Maxim Integrated Products, Inc.
Maixm
MAXIM - Dallas Semiconductor
Part No. MAX807 MAX807CPE MAX807CWE MAX807EPE MAX807EWE MAX807MJE MAX807L MAX807N MAX807NCPE MAX807LMJE MAX807NEWE MAX807NEPE MAX807NMJE MAX807LEPE MAX807LEWE
OCR Text ...s, or other low-power logic. 6) Write protection of CMOS RAM or EEPROM. 7) 2.275V threshold detector--provides for power-fail warning and low-battery detection, or monitors a power supply other than +5V. 8) BATT OK status flag indicates tha...
Description Full-featured microprocessor supervisory circuit with -1.5% reset accuracy. Reset threshold (typ) 4.675V
Full-Featured レP Supervisory Circuit with 1.5eset Accuracy 全功能レP监控电路与精度1.5eset
Full-Featured レP Supervisory Circuit with .5eset Accuracy
Full-Featured P Supervisory Circuit with 1.5eset Accuracy
Full-Featured μP Supervisory Circuit with ±1.5% Reset Accuracy
Full-featured microprocessor supervisory circuit with -1.5% reset accuracy. Reset threshold (typ) 4.575V

File Size 115.40K  /  16 Page

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    MSM6542-01 MSM6542-02 MSM6542-03 MSM6542_01_02_03

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM6542-01 MSM6542-02 MSM6542-03 MSM6542_01_02_03
OCR Text ...arm function which can read and write data in units of seconds. It can be connected to various buses and can function as a peripheral IC of ...protection. The CMOS circuitry used in the MSM6542 affords low power dissipation. The crystal oscill...
Description REAL TIME CLOCK WITH PERIODIC AND ALARM OUTPUT
From old datasheet system

File Size 373.38K  /  54 Page

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For write-protection Found Datasheets File :: 18017    Search Time::1.109ms    
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