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  w 50- Datasheet PDF File

For w 50- Found Datasheets File :: 345619    Search Time::3.031ms    
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    665-501-04-50 665-503-04 665-512-04 665-521-04-50 665-532-04-50 665-930-04-50 665-997-04-50

Marl International Limited
Part No. 665-501-04-50 665-503-04 665-512-04 665-521-04-50 665-532-04-50 665-930-04-50 665-997-04-50
OCR Text ... 585 155 e: sales@marl.co.uk w: www.leds.co.uk ? marl international limited technical documentation has been designed by marl internatio...50 15 25 35 45 ambient temperature ta (c) forward current if (ma) derating graph d 10 20 30 40 50 0...
Description ?8.5mm mounting Hard black anodised aluminium housing

File Size 392.72K  /  4 Page

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    623-525-22-50 623-503-22 623-503-22-07 623-503-22-50 623-503-23 623-503-23-50 623-503-67 623-509-22 623-509-22-07 623-51

Marl International Limited
Part No. 623-525-22-50 623-503-22 623-503-22-07 623-503-22-50 623-503-23 623-503-23-50 623-503-67 623-509-22 623-509-22-07 623-512-22 623-512-23 623-997-22-50
OCR Text ... 585 155 e: sales@marl.co.uk w: www.leds.co.uk ? marl international limited technical documentation has been designed by marl internatio...50 15 25 35 45 ambient temperature ta (c) forward current if (ma) derating graph b 10 20 30 40 50 8 ...
Description Minimum line quantity 20 Panel sealing meets and exceeds IP67 rating

File Size 321.64K  /  4 Page

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    BLD6G21L-50 BLD6G21LS-50

NXP Semiconductors
Part No. BLD6G21L-50 BLD6G21LS-50
OCR Text ...o 2025 VDS (V) 28 PL(AV) (w) 8 Gp (dB) 13.5 D (%) 42 ACPR (dBc) -23 PL(3dB) (w) 50 Test signal: 6-carrier TD-SCDMA; PAR = 10.8 dB at 0.01 % probability on CCDF. IDq = 170 mA (main); VGS(amp)peak = 0 V. CAUTION This d...
Description TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
   TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

File Size 113.27K  /  14 Page

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    212-046-72-50 212-501-20-38 212-501-21-38 212-501-22-38 212-501-23-38 212-501-24-38 212-501-48-50 212-521-21-38 212-521-

Marl International Limited
Part No. 212-046-72-50 212-501-20-38 212-501-21-38 212-501-22-38 212-501-23-38 212-501-24-38 212-501-48-50 212-521-21-38 212-521-22-38 212-521-23-38 212-532-21-38 212-532-22-38 212-532-23-38 212-532-48-50 212-899-23-38 212-899-33-38 212-930-21-38 212-930-22-38 212-930-23-38 212-993-21-38 212-997-22-38 212-997-72-50 212-997-71-51 212-997-72-53 212-997-71-50 212-993-24-38 212-993-23-38 212-997-48-50 212-997-48-38 212-997-21-38 212-993-72-38 212-993-33-38 212-993-48-38 212-997-20-38 212-997-24-38
OCR Text ... 585 155 e: sales@marl.co.uk w: www.leds.co.uk ? marl international limited technical documentation has been designed by marl internatio...50 15 25 35 45 ambient temperature ta (c) forward current if (ma) derating graph d 10 20 30 40 50 0...
Description Direct replacement for T1 ? Lilliput Edison Screw E5

File Size 261.72K  /  5 Page

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    IPD22N08S2L-50

Infineon Technologies AG
Part No. IPD22N08S2L-50
OCR Text ... 75 -55 ... +175 55/175/56 mJ V w C Unit A Rev. 1.0 page 1 2006-07-18 IPD22N08S2L-50 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics1) Thermal resistance, junction - case Thermal...
Description OptiMOS Power-Transistor
27 A, 75 V, 0.065 ohm, N-CHANNEL, Si, POwER, MOSFET, TO-252AA

File Size 148.49K  /  8 Page

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    SCW1643US-50

STANLEY ELECTRIC CO.,LTD.
Part No. SCw1643US-50
OCR Text ...type) : Pale orange resin 100lm/w(High efficiency type) of environmentally friendly like CO2 reduction, white color source. wide variety of ...50 InGaN InGaN Cool white Cool white Pale Yellow Pale Yellow 82 82 TYP. 111 IF 300mA 111 ...
Description High Flux Type LED

File Size 419.51K  /  16 Page

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    BOPOLARICS
Part No. BMT10B450-50
OCR Text ... power dissipation 1250 w i c collector current 25 a t j junction temperature 200 o c t stg storage te...50 v, i c = 9.00 a, class c silicon microwave power transistor bipolarics inc. part n...
Description Silicon microwave power transistor.

File Size 153.22K  /  2 Page

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    BOPOLARICS
Part No. BMT1214B325-50
OCR Text ... power dissipation 1250 w i c collector current 25 a t j junction temperature 200 o c t stg storage te...50 features: ? p out = 325 w @ 1.2 - 1.4 ghz ? high gain g pe = 6.4 db @ 1.2 - 1.4 ghz ? ...
Description Silicon microwave power transistor.

File Size 140.00K  /  2 Page

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