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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB010P30QA
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| OCR Text |
...5
100
125
Drain-Source volatage VDS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Reverse Source-Drain Current IDR (A) Normalized Gate Source Threshold Voltage Vth
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 1... |
| Description |
P-Ch Trench MOSFET
|
| File Size |
460.35K /
4 Page |
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it Online |
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB2D0N60SA
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| OCR Text |
...5
100 125 150
Gate-Source volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Gate Threshold Voltage Vth (V)
5 Common Source 10 8 6 4 2 0 0 0.4
Fig6. IS-VSDF
Common Source Tc=25 C Pulse Test
3 2 1 0 -75
-50... |
| Description |
N-Ch Trench MOSFET N沟道沟道MOSFET
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| File Size |
467.51K /
5 Page |
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it Online |
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KEC[KEC(Korea Electronics)]
|
| Part No. |
KMB3D0P30SA
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| OCR Text |
...5
100 125 150
Gate-Source volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Reverse Source-Drain Current IDR (A) Gate Threshold Voltage Vth (V)
5 Common Source
VGS=VDS ID=250A 4 Pulse Test
Fig6. IDR - VSDF
10 ... |
| Description |
P-Ch Trench MOSFET
|
| File Size |
467.16K /
5 Page |
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it Online |
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|
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KEC Holdings
KEC[KEC(Korea Electronics)]
|
| Part No. |
KMB3D5PS30QA
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| OCR Text |
...80
120
160
Gate-Source volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Reverse Source-Drain Current IDR (A) Gate Threshold Voltage Vth (V)
5 Common Source
VGS=VDS ID=250A 4 Pulse Test
Fig6. IDR - VSDF
10 ... |
| Description |
SBD and P-Ch Trench MOSFET SBD智能交通和P -沟道MOSFET
|
| File Size |
464.70K /
5 Page |
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it Online |
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|
|
KEC[KEC(Korea Electronics)]
|
| Part No. |
KMB7D0DN40QA
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| OCR Text |
...80
120
160
Gate-Source volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Gate Threshold Voltage Vth (V) Reverse Drain Current IDR (A)
5 Common Source
VGS=VDS ID=250A 4 Pulse Test
Fig6. IDR - VSDF
10 8 6 4 2... |
| Description |
Dual N-Ch Trench MOSFET
|
| File Size |
455.98K /
4 Page |
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it Online |
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| |
|
|
KEC[KEC(Korea Electronics)]
|
| Part No. |
KMB7D1DP30QA
|
| OCR Text |
...5
100 125 150
Gate-Source volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Gate Threshold Voltage Vth (V)
5 Common Source 10 8 6 4 2 0 0 0.2
Fig6. IS-VSDF
3 2 1 0 -75
-50
-25
0
25
50
75
... |
| Description |
Dual P-Ch Trench MOSFET
|
| File Size |
469.26K /
5 Page |
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it Online |
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|
|
UOT[Unity Opto Technology]
|
| Part No. |
MID-56419 56419
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| OCR Text |
....1
1
10
100
Reverse volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC, Ee=0 mW/cm2 Photocurrent ( Ipamb / Ip 25J )
1.4
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2
1000.0
Dark ... |
| Description |
Photodiodes
T-1 3/4 PACKAGE PIN PHOTODIODE
|
| File Size |
34.89K /
3 Page |
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it Online |
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| |
|
|
UOT[Unity Opto Technology]
|
| Part No. |
MID-56A19 56A19
|
| OCR Text |
...
2000
1000
0
Reverse volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TA=25oC, Ee=0 mW/cm2 Total Power Dissipation mW
200
Capacitance C - pF Dark Current IR - nA
0 20 40 60 80 100
Reverse Voltage- VR FIG.2 CAPACITANCE ... |
| Description |
Photodiodes
T-1 3/4 PACKAGE PIN PHOTODIODE
|
| File Size |
35.84K /
3 Page |
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it Online |
Download Datasheet |
| |
|
|
UOT[Unity Opto Technology]
|
| Part No. |
MID-7341C
|
| OCR Text |
....1
1
10
100
Reverse volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC , Ee=0 mW/cm2 Total Power Dissipation mW
200
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2
1000
150
Dark... |
| Description |
SIDE-LOOK PACKAGE PIN PHOTODIODE
|
| File Size |
33.47K /
3 Page |
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it Online |
Download Datasheet |
| |
|
|
UOT[Unity Opto Technology]
|
| Part No. |
MID-73A1C 73A1C
|
| OCR Text |
....1
1
10
100
Reverse volatage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25oC , Ee=0 mW/cm2
200
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ, Ee=0mW/cm
1000
Total Power Dissipation mW
150
... |
| Description |
Photodiodes
SIDE-LOOK PACKAGE PIN PHOTODIODE
|
| File Size |
33.51K /
3 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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