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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7785-4UL
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| OCR Text |
...hermal Resistance SYMBOL
gm
VGSoff IDSS VGSO
CONDITION VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A
UNIT MIN. TYP...10V IDS 1.1A Pin= 28.0dBm
Frequency (GHz)
Output Power vs. Input Power
40 39 38 37 Po (dBm... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
68.41K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7785-60SL
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| OCR Text |
...ge Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c)
( Ta= 25C )
UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.6 MAX. -3.0 ...10V
49
IDS13.2A Pin=42.0dBm
48
47
46
7.7
7.9
8.1
8.3
8.5
Frequency(G... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
79.91K /
4 Page |
View
it Online |
Download Datasheet |
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|
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM7785-8UL
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| OCR Text |
...hermal Resistance SYMBOL
gm
VGSoff IDSS VGSO
CONDITION VDS= 3V IDS= 3.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -100A
UNIT MIN. TY...10V IDS 2.2A Pin= 31.0dBm
Frequency (GHz)
Output Power vs. Input Power
42 41 40 39 Po (dBm... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
68.72K /
4 Page |
View
it Online |
Download Datasheet |
|
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