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Advanced Power Electronics
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Part No. |
4511GD
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OCR Text |
...rrent v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio... |
Description |
Search --To AP4511GD
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File Size |
187.67K /
8 Page |
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Advanced Power Electronics
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Part No. |
4511GM
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OCR Text |
... o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs ...ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditio... |
Description |
Search --To AP4511GM
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File Size |
133.49K /
7 Page |
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Microsemi
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Part No. |
2N5415ua 2N5416ua
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OCR Text |
...tion this family of 2n5415 ua and 2n5416 ua epita xial planar transistors are military qualified up to a jans level for high - relia...ch" controls the overall package thickness. when a window lid is used, dimension "ch" must increas... |
Description |
PNP Transistor
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File Size |
230.93K /
6 Page |
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Microsemi Corporation
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Part No. |
2N2907AUB 2N2906AL 2N2906Aua 2N2906AUB 2N2906AUBC 2N2906A1 2N2907AUBC 2N2907AL 2N2907Aua JANSR2N2907A JANSR2N2907AUB
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OCR Text |
...adc, v ce = 10vdc 2n2906a, l, ua, ub, ubc 2n2907a, l, ua, ub, ubc 40 75 i c = 1.0madc, v ce = 10vdc 2n2906a, l, ua, ub,...ch .170 .210 4.32 5.33 4. dimension tl measured from maximum hd. hd .209 .230 5.31 5.... |
Description |
RADIATION HARDENED ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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File Size |
97.02K /
6 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
KS86C4302
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OCR Text |
...xcept i lih2 v in = v dd ? ? 1 ua i lih2 x in , x out v in = v dd 20 input l ow l eakage current i lil1 all inputs except i lil2 and reset v in = 0 v ? ? - 1 ua i lil2 x in , x out v in = 0 v - 20 output h igh l eakage c urren... |
Description |
CAP 100PF 50V 5% NPO(C0G) SMD-0603 TR-7-PA
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File Size |
210.66K /
34 Page |
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SamHop Microelectronics...
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Part No. |
STU310DH
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OCR Text |
... i gss v gs 20v, v ds 0v = = 10 ua on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = 250ua = v d ra in-s ourc...ch 0.9 1.3 -0.9 -1.3 v gs = 0v, is =-6a p-ch v b c notes b.guaranteed by design, not subject to prod... |
Description |
Dual E nhancementMode Field E ffect Transistor ( N and P channel)
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File Size |
287.89K /
11 Page |
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