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t1 e1 Datasheet PDF File

For t1 e1 Found Datasheets File :: 4586 Search Time::1.516ms
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				Renesas Electronics Corporation
Part No.	NP74N04YUG-e1-AY NP74N04YUG-E2-AY
OCR Text	...er dissipation (t c = 25 c) p t1 120 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 32 a repetit...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	218.52K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP82N10PUF-e1-AY NP82N10PUF-E2-AY
OCR Text	...er dissipation (t c = 25 c) p t1 150 w total power dissipation (t a = 25 c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg -55 to +175 c single avalanche current ? 2 i as 34 a single avalanche en...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	238.76K / 9 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP89N04PUK-e1-AY NP89N04PUK-E2-AY NP89N04PUK-15
OCR Text	...wer dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 37 a repetitive avalan...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	108.09K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP90N04VUK-e1-AY NP90N04VUK-E2-AY NP90N04VUK-15
OCR Text	...wer dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 37 a repetitive avalan...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	106.69K / 8 Page	View it Online	Download Datasheet

				JST Mfg. Co., Ltd. Renesas Electronics Corporation
Part No.	NP75N04YUG-e1-AY NP75N04YUG-E2-AY NP75N04YUG-15
OCR Text	...er dissipation (t c = 25 c) p t1 138 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 35 a repetit...
Description	75000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, HSON-8 MOS FIELD EFFECT TRANSISTOR
File Size	219.47K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP35N04YLG-e1-AY NP35N04YLG-E2-AY
OCR Text	...er dissipation (t c = 25 c) p t1 77 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 22 a repetiti...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	204.52K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	UPA2721GR-e1 PA2721GR-15
OCR Text	...al power dissipation note2 p t1 1.1 w total power dissipation (pw = 10 sec) note2 p t2 2.5 w channel temperature t ch 150 c storage temperature t stg ?55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mount...
Description	19 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET SWITCHING N-CHANNEL POWER MOSFET
File Size	269.99K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP33N075YDF-e1-AY NP33N075YDF-E2-AY NP33N075YDF-15
OCR Text	...er dissipation (t c = 25 c) p t1 92 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 21 a repetiti...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	219.18K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP23N06YDG-e1-AY NP23N06YDG-E2-AY
OCR Text	...er dissipation (t c = 25 c) p t1 60 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 11 a repetiti...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	215.07K / 8 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	NP28N10SDE-e1-AY NP28N10SDE-E2-AY
OCR Text	...er dissipation (t c = 25 c) p t1 100 w total power dissipation (t a = 25 c) ? 2 p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ? 55 to +175 c single avalanche current ? 3 i as 24 a single avalan...
Description	MOS FIELD EFFECT TRANSISTOR
File Size	243.07K / 8 Page	View it Online	Download Datasheet

For t1 e1 Found Datasheets File :: 4586 Search Time::1.516ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |