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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
SMAJ14
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| OCR Text |
...40 amps. unit p m(av) 1.0 watts steady state power dissipation at t l =75 c p pk watts peak power dissipation at t a = 25 c, t p = 1ms (note 1,2) symbols value minimum 400 c characteristics (jedec method) surface mount unidirectio... |
| Description |
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
50.65K /
4 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
SI3442DVD87Z
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| OCR Text |
...mounting pad area (in ) i , steady-state drain current (a) 2 1c 1b 1a 4.5"x5" fr-4 board t = 25 c still air v = 4.5v a o gs d 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2oz copper mounting pad area (in ) steady-state power dissipation (w... |
| Description |
4100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
227.99K /
10 Page |
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PULSE ELECTRONICS CORP
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| Part No. |
PA1315NL
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| OCR Text |
...duc- tance during transient and steady-state conditions. as a result, any attempt to lower the inductance to improve transient response has the negative result of increasing ripple and peak currents throughout the system during steady-state... |
| Description |
5 ELEMENT, 0.37 uH, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
516.85K /
2 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
WNMD6003 WNMD6003-6TR
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| OCR Text |
... parameter symbol 10 s steady state unit drain - source vo ltage v ds 60 v gate - source voltage v gs 20 continuous drain current a d t a =25c i d 0.30 0.27 a t a =70c 0.24 0.21 maximum power ... |
| Description |
Dual N-Channel, 60V, 0.30A, Power MOSFET
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| File Size |
1,676.30K /
7 Page |
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it Online |
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Price and Availability
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