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  rg-8 Datasheet PDF File

For rg-8 Found Datasheets File :: 36863    Search Time::1.672ms    
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    CT35SM-8

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
Part No. CT35SM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 180A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 200A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size 33.67K  /  2 Page

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    CT20VML-8

Renesas Electronics Corporation
Part No. CT20VML-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size 45.71K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT20TM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description STROBE FLASHER USE
File Size 24.75K  /  2 Page

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    CT20VSL-8

Renesas Electronics Corporation
Part No. CT20VSL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size 46.16K  /  3 Page

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    CT30VM-8

Renesas Electronics Corporation
Part No. CT30VM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size 46.66K  /  3 Page

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    CT20ASL-8

Renesas Electronics Corporation
Part No. CT20ASL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 300V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size 45.75K  /  3 Page

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    TIM1414-8-252

Toshiba Semiconductor
Part No. TIM1414-8-252
OCR Text ... Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Satur...8.0 1.6 MAX. -5.0 10.4 2.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0 A VDS=...
Description HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
File Size 120.32K  /  4 Page

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    CT20TM-8

Renesas Electronics Corporation
Part No. CT20TM-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size 47.81K  /  3 Page

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    Mitsubishi Electric Corporation
Part No. CY20AAJ-8
OCR Text ... GATE VG VOLTAGE - VCM RG VCE Xe TUBE CURRENT IXE VG IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 120A ICP = 130A CM = 400F CM = 300F VGE = 5V Notice 1. Gate drive voltage...
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size 37.80K  /  2 Page

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    Mitsubishi Electric Corporation
Part No. CY25AAJ-8
OCR Text ... GATE VG VOLTAGE - VCM RG VCE Xe TUBE CURRENT IXE VG IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 130A ICP = 150A CM = 400F CM = 330F VGE = 5V Notice 1. Gate drive voltage...
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size 37.57K  /  2 Page

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