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rg-8 Datasheet PDF File

For rg-8 Found Datasheets File :: 36863 Search Time::1.672ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] POWEREX[Powerex Power Semiconductors]
Part No.	CT35SM-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 180A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 200A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
File Size	33.67K / 2 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20VML-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	45.71K / 3 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CT20TM-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description	STROBE FLASHER USE
File Size	24.75K / 2 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20VSL-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	46.16K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT30VM-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 160A CM = 800F VGE = 28V MAXIMUM CONDITION 360V 180A 1000F Notice 1. Gate drive voltage during on-period must be applied to sati...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	46.66K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20ASL-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 300V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	45.75K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM1414-8-252
OCR Text	... Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Satur...8.0 1.6 MAX. -5.0 10.4 2.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0 A VDS=...
Description	HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
File Size	120.32K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20TM-8
OCR Text	... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	47.81K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	CY20AAJ-8
OCR Text	... GATE VG VOLTAGE - VCM RG VCE Xe TUBE CURRENT IXE VG IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 120A ICP = 130A CM = 400F CM = 300F VGE = 5V Notice 1. Gate drive voltage...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	37.80K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	CY25AAJ-8
OCR Text	... GATE VG VOLTAGE - VCM RG VCE Xe TUBE CURRENT IXE VG IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 130A ICP = 150A CM = 400F CM = 330F VGE = 5V Notice 1. Gate drive voltage...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	37.57K / 2 Page	View it Online	Download Datasheet

For rg-8 Found Datasheets File :: 36863 Search Time::1.672ms
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