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For relaxed Found Datasheets File :: 402 Search Time::1.829ms
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				Hynix Semiconductor
Part No.	HY27UH084G2M HY27UH164G2M
OCR Text	...DS 20 25 tWC 50 70 tR 25us 27us relaxed value Case tRC 50 tRP tREH tREA 20 20 25 20 20 30 30 30 30 Specification Read(all) Except for feb. 07. 2005 relaxed value ID Read ID Read 2) Add note.4(table14) 50 60 3) Add application note(Power on/...
Description	(HY27xHxx4G2M Series) 4G-Bit NAND Flash Memory
File Size	365.64K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208Q0A-DCB0 K9F1208Q0A-HCB0 K9F1208Q0A-HIB0 K9F1208U0A-DCB0 K9F1208U0A-DIB0 K9F1208U0A-FCB0 K9F1208U0A-FIB0 K9F1208U0A-HCB0 K9F1208U0A-HIB0 K9F1208U0A-VIB0 K9F1216U0A-YCB0 K9F1216U0A-DIB0 K9F1216U0A-HIB0 K9F1216U0A-PCB0 K9F1216Q0A-HIB0 K9F1216Q0A-DCB0 K9F1216Q0A-HCB0
OCR Text	...Table Parameters Specification relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Sam...
Description	64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
File Size	805.26K / 45 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYE18P32160AC-96 HYE18P32160AC HYE18P32160AC-125 HYE18P32160ACL125 HYE18P32160ACL15 HYE18P32160ACL96 HYE18P32160AC-15
OCR Text	...added for burst operation tACLK relaxed to 7ns for grade of 9.6 tHD relaxed to 1.5ns for grade of 9.6 tLZ, tBLZ, tOLZ are adjusted S/W Register Entry mode is officially supported and specified We Listen to Your Comments Any information w...
Description	32M Synchronous Burst CellularRAM
File Size	1,110.05K / 53 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY27SF081G2M
OCR Text	... Add Errata tCLS Specification relaxed value 0 5 tCLH 10 15 tWP 25 40 tALS 0 5 tALH 10 15 tDS 20 25 tWC 50 60 tR 25 27 History Draft Date Aug. 2004 Remark Preliminary 0.1 Sep. 2004 Preliminary 0.2 Oct. 2004 Pre...
Description	(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
File Size	417.53K / 47 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PCA1070 PCA1070P PCA1070T
OCR Text	...ending and receiving levels and relaxed performance. At line currents below 16 mA the DC bias current ILN is reduced from 3 mA to a lower value to ensure maximum possible transmit level capability under all line current conditions. SET IMPE...
Description	Multistandard programmable analog CMOS transmission IC
File Size	170.14K / 36 Page	View it Online	Download Datasheet

				HYNIX
Part No.	HY27LF081G2M-TCB
OCR Text	... Add Errata tCLS Specification relaxed value 0 5 tCLH 10 15 tWP 25 40 tALS 0 5 tALH 10 15 tDS 20 25 tWC 50 60 tR 25 27 History Draft Date Aug. 2004 Remark Preliminary 0.1 Sep. 2004 Preliminary 0.2 Oct. 2004 Pre...
Description	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
File Size	479.08K / 49 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	AN1406 AN1406_D
OCR Text	...s, specification limits must be relaxed to guarantee acceptable manufacturing yields. The level of relaxation of these specifications increases with increasing logic depth. As the depth of the logic within a device increases the input signa...
Description	DESIGNING WITH PECL (ECL AT 5.0)
File Size	103.02K / 8 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TB31296FT
OCR Text	...OBB1 OBB2 OBB3 OBB4 (1) use relaxed regulation (2) use relaxed regulation from spurious response TX CHARACTERISTICS CHARACTERISTICS TX output signal level TX Output Signal control range TX max output TX minimum output 20dB bandwidth...
Description	Bluetooth RF IC
File Size	192.12K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
OCR Text	...Table Parameters Specification relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns tREA 30 60 tCEA 45 75 Sincerely, chwoosun@sec.samsung.com Product Planning & Application Eng. Memory Division Sam...
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata
File Size	712.11K / 38 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8
OCR Text	...Simplified State Diagram" added relaxed Absolute Maximum Ratings (+0.5/-1.0 V instead of 0.3 V relative to VDD/VSS) Note 4: relaxed over-/underswing delta to 2.0 V deleted VDD and VDDQ range above tables and partly replaced by note "(Recomm...
Description	256-Mbit Mobile-RAM
File Size	807.42K / 55 Page	View it Online	Download Datasheet

For relaxed Found Datasheets File :: 402 Search Time::1.829ms
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