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				eupec GmbH
Part No.	DZ950N
OCR Text	...al resistance, junction to case pro modul / per module, = 180 sin pro modul / per module, dc r thjc max. max. 0,042 0,0405 c/w c/w bergan...1000 1200 1400 1600 1800 2000 2200 0 400 800 1200 1600 i fav [a] 120 rec 180 sin 180 rec dc =...
Description	Rectifier Diode Module
File Size	216.18K / 10 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	TZ425N TZ425N14KOF
OCR Text	...l resistance, junction to case pro modul / per module, = 180 sin pro modul / per module, dc r thjc max. max. 0,0780 0,0745 c/w ...1000 0 200 400 600 800 i tav [a] dc 180 120 90 60 = 30 0 0 180 durchlassverlustleistung je zwei...
Description	Netz-Thyristor-Modul Phase Control Thyristor Module
File Size	444.27K / 13 Page	View it Online	Download Datasheet

				Littelfuse, Inc.
Part No.	V321HC32
OCR Text	...ental speci?cations wave solder pro?le 0 50 100 150 200 250 300 00.511.522.533.54 time(minutes) temperature (oc) maximum wave 240c leadCfree pro?le 0 50 100 150 200 250 300 00.511.522.533.54 time(minutes) temperature (oc) maximum wave 2...
Description
File Size	137.64K / 5 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	TT375N
OCR Text	...al resistance, junction to case pro modul / per module, = 180 sin pro zweig / per arm, = 180 sin pro modul / per module, dc pro zweig ...1000 0 100 200 300 400 500 600 i tav [a] = 30 60 90 120 180 0 0 180 durchlassverlustleistung je ...
Description	Netz-Thyristor-Modul Phase Control Thyristor Module
File Size	403.25K / 13 Page	View it Online	Download Datasheet

				Eupec
Part No.	TDW3C115N12
OCR Text	...urchla?strom-grenzeffektivwert (pro element) i trmsm 100 a rms on-state current (per chip) effektivstrom (pro phase) t c = 85c i rms 115 a ...1000 a surge current t vj = t vj max , t p = 10ms 870 a grenzlastintegral t vj = 25c, t p = 10ms...
Description	(TDW3C115N12 - TDW3C115N18) Thyristor Module
File Size	317.89K / 10 Page	View it Online	Download Datasheet

				OSRAM GmbH
Part No.	LE-RTDUWS-2W
OCR Text	...e einzig e helligkeitsgruppe pro gurt geliefert. z.b.: le rt duw s2w-...- kzlz -4p7r bedeutet, dass auf dem gurt nur eine der hell...1000 ma ma sto?strom pro chip dc surge current per chip dc t 10 m s, d = 0.1; t s =25c i ...
Description	compact lightsource in multi chip SMT technology with glass window on top
File Size	809.32K / 24 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	DD89N DD89N03
OCR Text	...al resistance, junction to case pro modul / per module, = 180 sin pro zweig / per arm, = 180 sin pro modul / per module, dc pro zweig ...1000 1 10 100 -di/dt [a/s] i fm = 500a 10a 20a 50a 100a 200a sperrverz?gerungsladung / recovered ch...
Description	Rectifier Diode Module
File Size	227.49K / 10 Page	View it Online	Download Datasheet

				意法半导
Part No.	TDA7293HS
OCR Text	...ue to the need of sophisticated pro- tection circuits. to overcome these substantial drawbacks, the use of power mos devices, which are immu...1000 m f 35v c8 100nf c6 1000 m f 35v c1 1000 m f 63v c2 1000 m f 63v c3 100nf c4 100nf +50v +25v d1...
Description	120V - 100W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
File Size	416.12K / 15 Page	View it Online	Download Datasheet

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