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Infineon Technologies A...
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Part No. |
PTFA080551EV4R250
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OCR Text |
...fets designed for edge and cdma power amplifier applications in the 869 to 960 mhz band. features include input matching and thermally- enha...limited internal distribution edge evm and modulation spectrum vs. quiescent current v dd = 28 v, ... |
Description |
Thermally-Enhanced High Power RF LDMOS FETs
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File Size |
4,436.53K /
11 Page |
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Infineon Technologies A...
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Part No. |
AUIRLR024N
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OCR Text |
...his cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. t...limited) ? 68 mj i ar avalanche current ? 11 a e ar repetitive avalanche energy ? 4.5 mj ... |
Description |
AUTOMOTIVE GRADE
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File Size |
476.89K /
11 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
AUIRLR120NTRL
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OCR Text |
...his cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. thi...limited) ? 85 mj i ar avalanche current ? 6.0 a e ar repetitive avalanche energy ? 4.8 m... |
Description |
AUTOMOTIVE GRADE
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File Size |
429.88K /
10 Page |
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it Online |
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Cystech Electonics Corp...
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Part No. |
MTC4506J4
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OCR Text |
... n & p-channel enhancement mode power mosfet mtc4506j4 n-ch p-ch bv dss 60v -60v i d 5.4a -4.0a features ? low gate char...limited by junction temperature t j(max) =175 c. ratings are based on low frequency ... |
Description |
N & P-Channel Enhancement Mode Power MOSFET
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File Size |
293.34K /
13 Page |
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it Online |
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Price and Availability
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