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MOTOROLA
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| Part No. |
MRF6S21050L
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| OCR Text |
... 29 30 31 32 33 34 35 36 Actual p3db = 48.66 dBm (73.43 W) Ideal
-20
-30
-50
-60 0.01
0.1
1 TWO-TONE SPACING (MHz)
10
100
44 28
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Ton... |
| Description |
The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,
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| File Size |
429.79K /
12 Page |
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MOTOROLA
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| Part No. |
MRF6S21060N
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| OCR Text |
... f = 2140 MHz 30 32 34 36 38 40 p3db = 49.986 dBm (99.68 W) P1dB = 49.252 dBm (84.18 W) Actual Ideal
-20
-30
3rd Order
-40
5th Order 7th Order
-50
-60 0.1
1 TWO-TONE SPACING (MHz)
10
100
43 28
Pin, INPUT ... |
| Description |
2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
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| File Size |
613.88K /
16 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5P21180R6 MRF5P21180
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| OCR Text |
...42 Pin, INPUT POWER (dBm) Ideal p3db = 53.72 dBm (236 W) P1dB = 52.99 dBm (199 W) Actual
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power
MOTOROLA RF DEVICE DATA
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| Description |
N-Channel Enhancement-Mode Lateral MOSFET
RF Power Field Effect Transistor
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| File Size |
406.67K /
9 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6S010NR1 MW6S010GNR1
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| OCR Text |
...eal Pout, OUTPUT POWER (dBm) 46 p3db = 43.14 dBm (20.61 W)
44
P1dB = 42.23 dBm (16.71 W) Actual
42 VDD = 28 Vdc, IDQ = 125 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 945 MHz 19 21 23 25 27 29
40 38
10
100
TWO-TONE SPACING... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
722.05K /
20 Page |
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MOTOROLA
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| Part No. |
MRF6S19060N
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| OCR Text |
...Center Frequency of 1960 MHz 53 p3db = 49.503 dBm (89.19 W) Pout, OUTPUT POWER (dBm) 51 49 47 45 43 41 39 23 P1dB = 48.792 dBm (75.72 W)
Ideal
-20
-30 3rd Order -40 5th Order -50 7th Order
Actual
VDD = 28 Vdc, IDQ = 610 mA Pu... |
| Description |
1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
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| File Size |
605.95K /
16 Page |
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MOTOROLA
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| Part No. |
MRF6S19100N
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| OCR Text |
...eal 57 Pout, OUTPUT POWER (dBm) p3db = 52.156 dBm (164.29 W) 55 53 51 49 47 45 1 10 100 30 32 34 36 38 40 42 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz P1dB = 51.1... |
| Description |
MRF6S19100NBR1 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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| File Size |
613.04K /
16 Page |
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MOTOROLA
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| Part No. |
MRF6S19140H
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| OCR Text |
... P1dB = 52.3 dBm (171 W) Actual p3db = 53.1 dBm (204 W) Ideal
1
10
100
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Figure 8. Pulse CW Output Power vers... |
| Description |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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| File Size |
435.04K /
12 Page |
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it Online |
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