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  nbspnbspnbsphigh density cell Datasheet PDF File

For nbspnbspnbsphigh density cell Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    SAFT
Part No. LS14500EX
Description 3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell

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    SAFT
Part No. LS14500
Description 3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell

File Size 366.52K  /  2 Page

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    QuickLogic, Corp.
Part No. QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL3060-2PB456C QL3060-4PB456C QL3060-4PQ208C QL3060-1PQ208I
Description 60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-cell|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-cell|CMOS|BGA|456PIN|PLASTIC

File Size 212.99K  /  19 Page

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    LATTICE[Lattice Semiconductor]
Part No. ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI ISPLSI1016E-125LT44I ISPLSI1016E-100LT44I ISPLSI1016E02 ISPLSI1016E-80LT44I ISPLSI1016E-100LJ ISPLSI1016E-100LT44 ISPLSI1016E-125LJ ISPLSI1016E-125LT44 ISPLSI1016E-80LJ ISPLSI1016E-80LJI ISPLSI1016E-80LT44
Description IN-SYSTEM PROGRAMMABLE HIGH density PLD
IC,COMPLEX-EEPLD,64-cell,13NS PROP DELAY,LDCC,44PIN,PLASTIC

File Size 179.26K  /  12 Page

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    ACE632

ACE Technology Co., LTD.
Part No. ACE632
Description The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 947.24K  /  11 Page

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    STP4435A

Stanson Technology
Part No. STP4435A
Description STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 280.37K  /  6 Page

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    STP4403

Stanson Technology
Part No. STP4403
Description STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 315.59K  /  6 Page

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    ST2304SRG

Stanson Technology
Part No. ST2304SRG
Description ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 625.70K  /  6 Page

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    STN4480

Stanson Technology
Part No. STN4480
Description STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 744.55K  /  6 Page

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    ST3400SRG

Stanson Technology
Part No. ST3400SRG
Description The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

File Size 542.83K  /  6 Page

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