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MIMIX[Mimix Broadband]
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| Part No. |
22DSBA0423
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| OCR Text |
... This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Tempera... |
| Description |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier
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| File Size |
446.34K /
5 Page |
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Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
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| Part No. |
AN644
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| OCR Text |
...with permission, from 1998 IEEE microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137
Abstract A two-stage 1.9GHz monolithic low-...millimeter-Wave Monolithic Circuits Symposium, pp. 9 - 13 [6] N. Suematsu, M. Ono, S. Kubo, H. Sato,... |
| Description |
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz QuickChip设计示例2低功耗硅晶体管的1.9GHz的低噪声放大
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| File Size |
293.30K /
6 Page |
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Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
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| Part No. |
DRT1-3823 DRT1-3813
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| OCR Text |
microwave/ millimeter-Wave Modules * Low Phase Noise * Silicon Bipolar VCO * Full Band Tuning * GaAs MMIC Output Stage * Sample Output for Phase Locking * Excellent Tuning Linearity * 30 dB Attenuator * Waveguide/RF Output * Detected Output... |
| Description |
Digital Radio Transmitter Modules for 37 to 40 GHz
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| File Size |
54.43K /
4 Page |
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it Online |
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Hittite Microwave Corpo...
HITTITE[Hittite Microwave Corporation]
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| Part No. |
HMC300LM1
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| OCR Text |
microwave CORPORATION
v02.1201
HMC300LM1
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz
Features
SMT mmWave Package Gain > 1...millimeter wave amplifier requires no external RF matching components and minimal DC bypass componen... |
| Description |
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz
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| File Size |
273.50K /
8 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA4AGSW1
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| OCR Text |
... used makes it ideal for use in microwave and millimeter wave switch designs, where ultra low insertion loss is required. The very high shunt conductance of the diodes dramatically improves isolation at millimeter wave frequencies. These Al... |
| Description |
AlGaAs SPST Reflective PIN Diode Switch
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| File Size |
174.26K /
6 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA4AGSW2
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| OCR Text |
... used makes it ideal for use in microwave multi-throw switch designs, where the series capacitance in each off-arm will load the input. Also...millimeter Wave Performance
MA4AGSW2
V 1.00
TYPICAL INSERTION LOSS @ -10 mA
0 -0.2 IL ( dB )... |
| Description |
AlGaAs SP2T PIN Diode Switch
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| File Size |
229.43K /
6 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA4BN1840-1
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| OCR Text |
...M/A-COM's HMIC TM (Heterolithic microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon...millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gol... |
| Description |
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
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| File Size |
178.30K /
9 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA4BN1840-2
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| OCR Text |
...M/A-COM's HMIC TM (Heterolithic microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon...millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gol... |
| Description |
Monolithic HMIC Integrated Dual Bias Network 18 - 40 GHz
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| File Size |
174.51K /
8 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MA4PBL027
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| OCR Text |
...iodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a si... |
| Description |
HMICTM Silicon Beam-Lead PIN Diodes
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| File Size |
309.36K /
5 Page |
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it Online |
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