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lb 27 Datasheet PDF File

For lb 27 Found Datasheets File :: 4101 Search Time::0.985ms
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				AMIC Technology, Corp. AMICC[AMIC Technology]
Part No.	LP62S16256F-T LP62S16256FU-70LLT LP62S16256FV-70LLT
OCR Text	... 44 43 42 41 A5 A6 A7 OE HB lb I/O16 I/O15 I/O14 I/O13 GND VCC I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 A12 1 A B C D E F G H lb I/O9 ...27 26 25 24 23 PRELIMINARY (August, 2001, Version 0.2) 1 AMIC Technology, Inc. LP62S1...
Description	256K X 16 BIT LOW VOLTAGE CMOS SRAM 256 × 16位低电压CMOS的SRAM
File Size	157.80K / 14 Page	View it Online	Download Datasheet

				AMIC Technology Corporation AMICC[AMIC Technology]
Part No.	LP62S1664C LP62S1664CU-55LLI LP62S1664CU-55LLT LP62S1664CU-70LLI LP62S1664CU-70LLT LP62S1664CV-55LLI LP62S1664CV-55LLT LP62S1664CV-70LLI LP62S1664CV-70LLT
OCR Text	...8 27 26 25 24 23 A5 A6 A7 OE HB lb I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC n Mini BGA (6X8) Top View 1 A B C D E F G H lb I/O8 I/O9 VSS VCC I/O14 I/O15 NC 2 OE 3 A0 A3 A5 NC NC A14 A12 A9 4 A1 A4 A6 A7 N...
Description	64K X 16 BIT LOW VOLTAGE CMOS SRAM
File Size	147.22K / 15 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TA8493AF TA8493F TA8493BF
OCR Text	...gram VCC 5V La (G) 20 VCC 2 lb (G) 1 Lc (G) 27 29 Amplifier 4 VM1 12 V Ha + - 15 14 Matrix 13 Ha + Hb 12 Hb 16 + Hc - 17 Hc VM2 3 30 28 La lb Lc RF1 RF2 Reverse Detection TSD 6 25 GND FGO 10 HB 18 PWM Si...
Description	3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES
File Size	247.49K / 25 Page	View it Online	Download Datasheet

				Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TC554161AFT-10 TC554161AFT-10L TC554161AFT-70 TC554161AFT-70L TC554161AFT-85 TC554161AFT-85L
OCR Text	...access. Data byte control pin ( lb , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system ...27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 A4 A5 A6 A7 NC I...
Description	KEYING PLUG,FOR SKTS 262,144字由16位静态RAM 262,144-WORD BY 16-BIT STATIC RAM 262,144字由16位静态RAM
File Size	138.47K / 10 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
Part No.	TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L TC554161AFTI-10 TC554161AFTI-85 TC554161AFTI-85L TC554161AFTI
OCR Text	...access. Data byte control pin ( lb , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system ...27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 A4 A5 A6 A7 NC I...
Description	262,144-WORD BY 16-BIT STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	138.12K / 10 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = 2...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...C/W Volts 0.28 40 2500 13 lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.58mH, R = ...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	... Package Weight 29.2 10 lbin Nm Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 052-6257 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages i...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

For lb 27 Found Datasheets File :: 4101 Search Time::0.985ms
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