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IXYS[IXYS Corporation]
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| Part No. |
IXFR44N80P
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| OCR Text |
...J V/ns W C C C C C V~ N/lb g
isoplus247 (IXFR) E153432
Isolated Tab
G = Gate S = Source
D = Drain
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical i... |
| Description |
PolarHV HiPerFET Power MOSFET
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| File Size |
96.42K /
4 Page |
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IXYS, Corp.
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| Part No. |
IXGR40N60B2
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| OCR Text |
...ate, c = collector, e = emitter isoplus247 (ixgr) v ces = 600 v i c25 = 75 a v ce(sat) = 1.9 v t fi typ = 82 ns d1 ixgr 40n60b2 ixgr 40n60b2d1 hiperfast tm igbt isoplus247 tm c2-class high speed igbts (electrically isolated ... |
| Description |
60 A, 600 V, N-CHANNEL IGBT ISOPLUS 247, 3 PIN
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
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| File Size |
604.03K /
6 Page |
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IXYS, Corp.
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| Part No. |
IXGR50N60B2D1 IXGR50N60B2
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| OCR Text |
... gate c = collector e = emitter isoplus247 (ixgr) hiperfast tm igbt isoplus247 tm symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30... |
| Description |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
68 A, 600 V, N-CHANNEL IGBT isoplus247, 3 PIN
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| File Size |
607.95K /
6 Page |
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it Online |
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IXYS, Corp.
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| Part No. |
DSP45-16AR
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| OCR Text |
...e, 2 = anode/cathode, 3 = anode isoplus247? 3 1 2 tab
? 2009 ixys all rights reserved 2 - 2 20090528b dsp 45-16ar ixys reserves the right to change limits, test conditions and dimensions isoplus247 tm the convex bow of substrate is typ. <... |
| Description |
Phase-leg Rectifier Diode 43 A, 1600 V, SILICON, RECTIFIER DIODE
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| File Size |
48.32K /
2 Page |
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it Online |
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