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    Alliance Semiconductor
Part No. AS7C513B
OCR Text ...l toggling, the device consumes isb power. If the bus is static, then the full standby power is reached (isb1). The AS7C513B is guaranteed not to exceed 55mW power consumption under nominal full standby conditions. A write cycle is accompli...
Description 5V 32K x 16 CMOS SRAM

File Size 162.57K  /  9 Page

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    K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4

Samsung semiconductor
Part No. K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008C1C-C15 K6R4008C1C-E K6R4008C1C-E10 K6R4008C1C-E12 K6R4008C1C-E15 K6R4008C1C-I K6R4008C1C-I10 K6R4008C1C-I12 K6R4008C1C-I15 K6R4008C1C-TC12
OCR Text ... ICC 195mA 190mA 185mA Previous isb 70mA isb1 20mA ICC 170mA 160mA 150mA 140mA Current isb 60mA isb1 10mA Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 Mar. 27. 2000 Final 10ns 12ns 15ns 20ns 3.3 Added Extended temperature range Rev. 4...
Description CMOS SRAM
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

File Size 130.78K  /  9 Page

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    K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4

Samsung semiconductor
Part No. K6R4008V1C-C K6R4008V1C-C10 K6R4008V1C-C12 K6R4008V1C-C15 K6R4008V1C-I K6R4008V1C-I10 K6R4008V1C-I12 K6R4008V1C-I15 K6R4008V1C-L K6R4008V1C-P
OCR Text ... ICC 195mA 190mA 185mA Previous isb 70mA isb1 20mA ICC 155mA 145mA 135mA 125mA Current isb 60mA isb1 10mA Mar. 27. 2000 10ns 12ns 15ns 20ns Rev. 4.0 Rev. 5.0 Add Low Power-Ver. Delete 20ns speed bin Apr. 24. 2000 Sep. 24. 2001 ...
Description 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.

File Size 135.55K  /  9 Page

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    CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33-12VC CY7C1019BV33L-15ZC CY7C1018BV33 CY7C1018BV33-15VI CY7C1018BV33L-1

CYPRESS[Cypress Semiconductor]
CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1018BV33-15VC CY7C1018BV33L-12VC CY7C1018BV33-12VC CY7C1019BV33L-15ZC CY7C1018BV33 CY7C1018BV33-15VI CY7C1018BV33L-15VC CY7C1018V33-10VC CY7C1019BV33 CY7C1019BV33-10VC CY7C1019BV33-10ZC CY7C1019BV33-12VC CY7C1019BV33-12ZC CY7C1019BV33-15VC CY7C1019BV33-15VI CY7C1019BV33-15ZC CY7C1019BV33-15ZI CY7C1019BV33L-12VC CY7C1019BV33L-12ZC CY7C1019BV33L-15VC
OCR Text ...PU 50% tHZCE DATA VALID tPD 50% isb ICC HIGH IMPEDANCE Notes: 9. Device is continuously selected. OE, CE = VIL. 10. WE is HIGH for read cycle. 11. Address valid prior to or coincident with CE transition LOW. 4 CY7C1019BV33 CY7C1018...
Description 128K x 8 static RAM, 12ns
Memory : Async SRAMs
128K x 8 static RAM, 15ns

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    Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Part No. IDT71256SA15PZ IDT71256SA IDT71256SA20PZ IDT71256SA25Y IDT71256 IDT71256SA12PZ IDT71256SA12T IDT71256SA12TP IDT71256SA12Y IDT71256SA15T IDT71256SA15TP IDT71256SA15Y IDT71256SA20T IDT71256SA20TP IDT71256SA20Y IDT71256SA25PZ IDT71256SA25T IDT71256SA25TP
OCR Text ...Disabled Deselecte d - Standby (isb) Deselecte d - Standby (isb1) 2948 tbl 03 , L L H VHC(3) 2948 drw 02a TSOP Top View NOTES: 1. H = VIH, L = VIL, x = Don't care. 2. VLC = 0.2V, VHC = VCC -0.2V. 3. Other inputs VHC or VLC. ...
Description    CMOS STATIC RAM 256K (32K x 8-BIT)
Asynchronous Communications Element With Autoflow Control 48-LQFP -40 to 85
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 12 ns, PDSO28
Asynchronous Communications Element With Autoflow Control 48-TQFP 0 to 70 32K X 8 STANDARD SRAM, 25 ns, PDSO28

File Size 75.30K  /  8 Page

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    http://
NANOAMP[NanoAmp Solutions, Inc.]
Part No. N08T1630C1BT N08T1630CXB N08T1630C1BT2 N08T1630C1BT2-55 N08T1630C1BT2-70 N08T1630C1BT-55 N08T1630C1BT-70 N08T1630C1BZ2-55 N08T1630C1BZ2-70 N08T1630C1BZ-55 N08T1630C1BZ-70 N08T1630C2BT2-55 N08T1630C2BT2-70 N08T1630C2BT-55 N08T1630C2BT-70 N08T1630C2BZ N08T1630C2BZ2 N08T1630C2BZ2-55 N08T1630C2BZ2-70 N08T1630C2BZ-55 N08T1630C2BZ-70
OCR Text ...d Standby Operating Current (isb), Current (Icc), Max Max @ 3.0V -40oC to +85oC 2.7V - 3.6V 55/70ns @ 2.7V 70 A 3 mA @ 1MHz Pin Configuration (Top View) 1 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I...
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

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Part No. K7B321825M-FC750 K7B323625M-HC650 K7B323625M-FC650
OCR Text ... bit number of 69 1. add icc, isb, isb1 and isb2 values. 1. correct the pin name of 100tqfp. 1. change the stand-by current (isb) before after isb - 65 : 100 140 - 75 : 90 130 - 85 : ...
Description 2M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M X 36 CACHE SRAM, 6.5 ns, PBGA119
1M X 36 CACHE SRAM, 6.5 ns, PBGA165

File Size 372.03K  /  29 Page

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    KM68V257E-15 KM68V257E-20 KM68V257EI-15 KM68V257EI-20 KM68V257EJ KM68V257EL KM68V257EL-12 KM68V257EL-15 KM68V257ELI KM68

Samsung semiconductor
Part No. KM68V257E-15 KM68V257E-20 KM68V257EI-15 KM68V257EI-20 KM68V257EJ KM68V257EL KM68V257EL-12 KM68V257EL-15 KM68V257ELI KM68V257ELI-20 KM68V257ETG KM68V257E-12 KM68V257EI-12 KM68V257EL-20 KM68V257ELI-12 KM68V257EI KM68V257ELI-15
OCR Text ... 12ns 15ns 20ns Standby Current isb isb1 Min. Cycle, CS=VIH f=0MHz, CSVCC-0.2V, VINVCC-0.2V or VIN0.2V IOL=8mA IOH=-4mA Normal L-ver 2.4 Min -2 -2 Max 2 2 70 70 70 20 2 0.5 0.4 V V mA mA Unit A A mA Output Low Voltage Level Output High V...
Description 32Kx8 Bit High-Speed CMOS Static RAM (3.3V Operating)

File Size 183.10K  /  8 Page

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    KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 KM68257CLTG-12 KM68257CLTG-15 KM68257CLTG-20 KM68257CP-15 KM68257CTG-15 KM68257CTG-20 KM68257C-15 KM68257C-20 KM68257CLP-15 KM68257CP-20 KM68257CTG-12 KM68257CJ-15 KM68257CLJ-20 KM68257CLP-12 KM68257CP-12 KM68257C SAMSUNGSEMICONDUCTORCO.LTD.-KM68257CL-12
OCR Text ...A A Operating Current ICC isb I I I V V V Standby Current Output Low Voltage Level Output High Voltage Level * VCC=5.0V5% Temp.=25C isb1 VOL VOH VOH1* CAPACITANCE*(TA =25C, f=1.0MHz) Item Input/Output Capacitance Input ...
Description 32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作

File Size 190.63K  /  10 Page

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    IS93C46B IS93C46B-3GI IS93C46B-3GR IS93C46B-3G IS93C46B-3GRA IS93C46B-3GRI IS93C46B-3P IS93C46B-3PA IS93C46B-3PI IS93C46

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ISSI[Integrated Silicon Solution, Inc]
Part No. IS93C46B IS93C46B-3GI IS93C46B-3GR IS93C46B-3G IS93C46B-3GRA IS93C46B-3GRI IS93C46B-3P IS93C46B-3PA IS93C46B-3PI IS93C46B-3ZI IS93C46B-3Z
OCR Text ...cial Symbol Parameter ICC1 ICC2 isb Vcc Read Supply Current Vcc Write Supply Current Standby Current POWER SUPPLY CHARACTERISTICS TA = -40C to +85C for Industrial Symbol Parameter ICC1 ICC2 isb Vcc Read Supply Current Vcc Write Supply C...
Description 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM

File Size 63.97K  /  13 Page

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