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P130A 1537M P130A BY39604 P0431 BR2508 ADP3804 B7720
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For interleaved Found Datasheets File :: 3534    Search Time::0.953ms    
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    GS88018

GSI Technology
Part No. GS88018
OCR Text ... supply * LBO pin for Linear or interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to interleaved Pipelined mode * Byte Write (BW) and/or Global Write (GW) operation * Common data inputs and da...
Description 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))

File Size 381.10K  /  25 Page

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    GS816018

GSI Technology
Part No. GS816018
OCR Text ... supply * LBO pin for Linear or interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to interleaved Pipeline mode * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write ...
Description 16MbM x 18Bit)Sync Burst SRAM(16M位(1M x 18位)同步静态RAM(位脉冲地址计数)

File Size 522.43K  /  26 Page

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    GS815118

GSI Technology, Inc.
Part No. GS815118
OCR Text ... supply * LBO pin for Linear or interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to interleaved Pipeline mode * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write ...
Description 16MbM x 18Bit) Sync Burst SRAM(16M位(1M x 18同步静态RAM(带2位脉冲地址计数器))
16Mb1M x 18Bit) Sync Burst SRAM(16M位(1M x 18同步静态RAM(带2位脉冲地址计数器)) 16Mb的(100万x 18位)同步突发静态存储器1,600位(100万18位)同步静态随机存储器(带2位脉冲地址计数器)

File Size 588.60K  /  32 Page

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    GS815018 GS815036

GSI Technology, Inc.
Part No. GS815018 GS815036
OCR Text ... supply * LBO pin for Linear or interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to interleaved Pipeline mode * Byte Write (BW) and/or Global Write (GW) operation * Internal self-timed write ...
Description 16MbM x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(100万x 18位)同步突发静态存储器,600位(100万18位)同步静态随机存储器(带2位脉冲地址计数器)
16Mb12K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步静态RAM(带2位脉冲地址计数器)) 16Mb的(12k × 36Bit)同步突发静态存储器,600位(12k × 36位)同步静态随机存储器(带2位脉冲地址计数器)

File Size 520.27K  /  26 Page

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    Elpida Memory, Inc.
DRAM
Part No. EDX5116ADSE-4D-E EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E
OCR Text ...stained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly-efficient protocol yields over 95% utilization while allowing fine access granularity. The device's eight banks support up to four interleaved tr...
Description 512M bits XDRDRAM

File Size 3,316.99K  /  78 Page

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    W9812G2GH-75 W9812G2GH-6I W9812G2GH-6C

Winbond
Part No. W9812G2GH-75 W9812G2GH-6I W9812G2GH-6C
OCR Text ............................... 20 interleaved Bank Read (Burst Length = 4, CAS Latency = 3)............................................. 21 interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge).................. 22 Interle...
Description a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words × 4 banks × 32 bits

File Size 1,217.63K  /  42 Page

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    SONY
Part No. CXK77V3211Q-12 CXK77V3211Q-14
OCR Text ...fferent operation modes: Linear/interleaved burst sequence and Flow-Thru/Pipelined operations. WRITE cycles can be from one to four bytes wide as controlled by BW1 through BW4 and BWE or SGW. The output register is included on-chip and cont...
Description 32768-word by 32-bit High Speed Synchronous Static

File Size 372.66K  /  18 Page

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    GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88036T-11I GS88032T-66I GS88018T-11.5 GS88018T-66I GS88018T-100 GS88018T

GSI Technology, Inc.
Part No. GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88036T-11I GS88032T-66I GS88018T-11.5 GS88018T-66I GS88018T-100 GS88018T-100I GS88032T-80 GS88032T-80I GS88018GT-11.5I GS88018GT-11.5IT GS88036T-11 GS88018T-11I GS88018T-80 GS88018T-11.5I GS88018T-11.5T GS88032T-100I
OCR Text ... supply * LBO pin for Linear or interleaved Burst mode * Internal input resistors on mode pins allow floating mode pins * Default to interleaved Pipelined mode * Byte Write (BW) and/or Global Write (GW) operation * Common data inputs and da...
Description 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 18 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100

File Size 1,035.08K  /  25 Page

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    Renesas
Part No. M5M5V5636GP-20
OCR Text ...l allow the choice of either an interleaved burst, or a linear burst. All read, write and deselect cycles are initiated by the ADV LOW input. Subsequent burst address can be internally generated as controlled by the ADV HIGH input. FEATU...
Description Memory>Fast SRAM>Network SRAM

File Size 680.52K  /  18 Page

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