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				http:// Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
Part No.	KA5S KA5S0965-YDTU KA5S09654QT-YDTU KA5S12656-YDTU KA5S0765C-YDTU KA5S1265-YDTU KA5S1265-TU KA5S09654QT-TU FAIRCHILDSEMICONDUCTORCORP-KA5S1265-YDTU KA5S0965-TU KA5S12656TU KA5S12656YDTU KA5S1265TU KA5S1265YDTU
OCR Text	...teristic Symbol VD,MAX VDGR VGS idm ID ID (2) Value 650 650 30 28 7.0 5.6 20(570) 30 -0.3 to VCC -0.3 to 8 135 1.1 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC A(mJ) V V V W W / C C C C KA5S0765C Maximum drain voltage Drain...
Description	Fairchild Power Switch(FPS) 49 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PSFM5 ACB 6C 6#16S PIN PLUG AC 6C 6#16S SKT PLUG AC 2C 2#16S SKT PLUG
File Size	256.44K / 20 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7830-30
OCR Text	... 134) SYMBOL VDS VDGR VGS ID ID idm Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating tempe...
Description	TrenchMOS transistor Standard level FET
File Size	53.26K / 10 Page	View it Online	Download Datasheet

				California Eastern Laboratories, Inc. California Eastern Labs
Part No.	NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-AZ NR8500FP-BC-AZ NR8500CP-CC-AZ NR8500FP-CC-AZ NR8500CR-CB-AZ NR8500CR-BB-AZ NR8500BP
OCR Text	...) PART NUMBER SYMBOLS VBR 1 ID idm Ct fC S M x F ORL PARAMETERS AND CONDITIONS Reverse Breakdown Voltage, ID =100 A Temperature Coefficient of Reverse Breakdown Voltage Dark Current, VR = VBR x 0.9 Multiplied Dark Current, M = 2 to 10 Term...
Description	CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应 NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应 NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
File Size	203.81K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT34M120J-09
OCR Text	...lute Maximum Ratings Symbol ID idm VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non...
Description	N-Channel MOSFET
File Size	115.29K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK455-200 BUK455-200A BUK455-B200B BUK455-200B BUK455
OCR Text	... 134) SYMBOL VDS VDGR VGS ID ID idm Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Juncti...
Description	PowerMOS transistor
File Size	69.53K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTD3055-094-1 NTD3055-094T4 NTD3055-094-D
OCR Text	... Unit Vdc Vdc Vdc VGS VGS ID ID idm PD 12 3 CASE 369A DPAK (Bent Lead) STYLE 2 NTD3055-094 Y WW 1 2 3 S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source V...
Description	Power MOSFET 12 Amps, 60 Volts N-Channel DPAK 晶体管\| MOSFET的\| N沟道\| 60V的五（巴西）直\| 12A条（丁）\|52AA 晶体管\| MOSFET的\| N沟道\| 60V的五（巴西）直\| 12A条（丁）\|51AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-252AA TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 12A I(D) \| TO-251AA
File Size	74.00K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors NXP Semiconductors
Part No.	BUK455-100 BUK455-100A BUK455-100B BUK455-100A/B
OCR Text	... 134) SYMBOL VDS VDGR VGS ID ID idm Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Juncti...
Description	TRANSISTOR TO 220 MOSFET N KANAL PowerMOS transistor
File Size	68.96K / 7 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MTD3302_D ON2503
OCR Text	...0 Vdc Steady State Symbol ID ID idm PD RJC IS Value 30 30 90 96 769 1.3 30 Unit Adc Adc Adc Watts mW/C C/W Adc Parameter Drain Current -- Continuous @ TA = 25C Drain Current -- Continuous @ TA = 100C Drain Current -- Single Pulse (tp 10...
Description	SINGLE TMOS POWER MOSFET 30 VOLTS From old datasheet system
File Size	230.36K / 12 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT43M60B209
OCR Text	...lute Maximum Ratings Symbol ID idm VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non...
Description	N-Channel MOSFET
File Size	111.98K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips
Part No.	PIP3121-A PIP3121-A127
OCR Text	...tive clamping energy CONDITIONS idm = 25 A; VDD 20 V Tmb = 25C Tmb 95C; f = 250 Hz 550 60 mJ mJ MIN. MAX. UNIT 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage cl...
Description	62 A BUF OR INV BASED PRPHL DRVR, PZFM5 PLASTIC, SOT-263B-01, TO-220, 5 PIN Logic level TOPFET
File Size	40.05K / 7 Page	View it Online	Download Datasheet

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