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  id-2.7a Datasheet PDF File

For id-2.7a Found Datasheets File :: 2966    Search Time::1.125ms    
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    SPP20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPP20N60CFD
OCR Text ...very charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 P-TO220-3-1 V A Type SPP20N60CFD Package P-TO220-3-1 Ordering Code Q67040-S46...2.1 1700 0.19 0.51 0.54 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=20A...
Description for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor

File Size 164.33K  /  12 Page

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    SPW20N60C3

INFINEON[Infineon Technologies AG]
Part No. SPW20N60C3
OCR Text ID 650 0.19 20.7 P-TO247 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Peri...2.1 - Unit V V(BR)DS VGS=0V, ID=20A A 25 250 100 0.19 nA Gate-source leakage current ...
Description for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 255.94K  /  12 Page

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    SPW20N60CFD

INFINEON[Infineon Technologies AG]
Part No. SPW20N60CFD
OCR Text ...very charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 P-TO247 V A Type SPW20N60CFD Package P-TO247 Ordering Code Q67040-S4617 Ma...2.1 1700 0.19 0.51 0.54 max. 5 Unit V V (BR)DSS V GS=0V, I D=0.25mA V (BR)DS V GS=0V, I D=20A...
Description Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
Cool MOS?/a> Power Transistor
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
for lowest Conduction Losses & fastest Switching

File Size 161.83K  /  12 Page

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    Analog Power
Part No. AM4512CE
OCR Text ...5 vds, drain-source voltage (v) id, drain current (a) 5.0v vgs = 10v 6.0v 3.0v 4.0v 0 5 10 15 20 25 30 0.5 1.5 2.5 3.5 4.5 vgs, gate to source voltage (v) id, drain current (a) ta = -55 o c 25 o c 125 o c vds = 5v 0.5 1 1.5 2 2.5 0 5 10 15 ...
Description P & N-Channel 30-V (D-S) MOSFET

File Size 258.76K  /  8 Page

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    Analog Power
Part No. AM4512AC
OCR Text ...s, drain to source voltage (v) -id, drain current (a) vgs = -10v -3.0v -4.0v -5.0v -6.0v 0 3 6 9 12 15 11.522.533.544.5 -vgs, gate to sou...2 1.4 1.6 1.8 2 0 6 12 18 24 30 -id, drain current (a) rds(on), normalized drain-source on-resistanc...
Description P & N-Channel 30-V (D-S) MOSFET

File Size 219.68K  /  7 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ... V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A ...2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25C, IS = -1.7A,...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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    IRFL014N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFL014N
OCR Text ... Avalanche Rated D G S ID = 1.9A Description Fifth Generation HEXFET(R) MOSFETs from International Rectifier utilize advanced p...2.7 1.9 1.5 15 2.1 1.0 8.3 20 48 1.7 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/n...
Description 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管)
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)

File Size 140.28K  /  8 Page

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