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STEC, Inc.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
T830W T820-400W T820-600W T820-700W T820W T830-400W T830-600W T830-700W
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| OCR Text |
...s (1/2 cycle, 50 Hz) I2 t dI/dt i2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating... |
| Description |
SNUBBERLESS TRIAC
SNUBBERLESS TRIAC 缓冲器可控硅
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| File Size |
61.65K /
5 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
T620-600W
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| OCR Text |
...) tp = 10 ms (1/2 cycle, 50 Hz) i2t dI/dt i2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range... |
| Description |
SNUBBERLESS TRIAC
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| File Size |
111.63K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
T0809XH T0805XH T0805NH
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| OCR Text |
...ate current (Tj initial = 25C ) i2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 50 mA Tc= 95 C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating jun... |
| Description |
800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC
SENSITIVE GATE TRIACS
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| File Size |
56.63K /
5 Page |
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| Part No. |
FT0607DH00TU FT0607MH00TU
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| OCR Text |
...nditions value unit symbol itsm i2t igm p g(av) tj tstg di/dt itsm repetitive peak off state parameter voltage unit symbol vdrm vrrm b v tsld soldering temperature ft06...h gate trigger current < 10 ma to-220ab mt1 mt2 mt2 g sep - 09 logic ... |
| Description |
400 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
600 V, 6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
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| File Size |
343.45K /
4 Page |
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Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
SV10XX SV10 SV1016K SV1016M SV1020K SV1020M SV1025K SV1025M
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| OCR Text |
...V10
SURGE RATINGS
Symbol IFSM i2t IFSM i2t Parameter Surge (non-repetitive) forward current i2t for fusing Surge (non-repetitive) forward current i2t for fusing Conditions 10ms half sine; Tcase = 175oC VR = 50% VRRM - 1/4 sine 10ms half s... |
| Description |
Rectifier Diode 180 A, 2000 V, SILICON, RECTIFIER DIODE, DO-8
From old datasheet system
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| File Size |
135.19K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
ST333S ST333S08PFM1L ST333S04PFM1L
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| OCR Text |
...@ TC IT(RMS) ITSM @ 50Hz @ 60Hz i2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST333S
330 75 518 11000 11520 605 550 400 to 800 10 to 30 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AE (TO-118)
D-501
To Order
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| Description |
INVERTER GRADE THYRISTORS Stud Version
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| File Size |
366.46K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
ST333C1111
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| OCR Text |
...lf wave, Initial TJ = TJ max
i2t
Maximum i2t for fusing
605 553 428 391
I 2 t
Maximum i2t for fusing
6050
t = 0.1 to 10ms, no voltage reapplied
To Order
Previous Datasheet ST333C..C Series
Index
Next Data Sh... |
| Description |
INVERTER GRADE THYRISTORS Hockey Puk Version
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| File Size |
429.57K /
10 Page |
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it Online |
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