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1771846 4HC401 W39V04 2N3643 LT1036M S16MD02 225100P MC790
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For hyper Found Datasheets File :: 1783    Search Time::1.203ms    
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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text ... Access time from CAS precharge hyper Page cycle time hyper Page read-modify-write cycle time CAS precharge time (hyper page cycle) RAS pulse width (hyper page cycle) RAS hold time from CAS precharge OE access time OE to data delay CAS prec...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    SDR60010 SDR60020 SDR60015 SDR60010HCT

Solid States Devices, Inc
Part No. SDR60010 SDR60020 SDR60015 SDR60010HCT
OCR Text ...to-254z recovery time h = hyper fast family/voltage 010 = 100v 015 = 150v 020 = 200v sdr60010hct thru sdr60020hct 60 amp hyper fast centertap rectifier 100 - 200 volts 35 nsec features: ? hyper f...
Description hyper FAST CENTERTAP RECTIFIER

File Size 167.12K  /  3 Page

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    Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG

INFINEON[Infineon Technologies AG]
Part No. Q67007-A5211 TUA6010XS TUA6010 TUA6010XSGEG
OCR Text ...alanced oscillator for the VHF, hyper and UHF frequency range Optimum decoupling of input frequency from oscillator The IC is suitable for all tuners in TV- and VCR-sets or cable set-top receivers for analog TV an Digital Video Broadcasting...
Description Wireless Components
TV Mixer-Oscillator-PLL

File Size 337.75K  /  32 Page

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    M53230804BT0-C

Samsung Semiconductor
Part No. M53230804BT0-C
OCR Text ...IH, RAS cycling @tRC=min) ICC4 :hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (An...
Description (M53230804BT0-C/BY0) DRAM Module

File Size 554.35K  /  21 Page

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    HYB3117805BJ-60 HYB3117805BJ-70 HYB3117805BSJ-50- HYB3117805BSJ-70 HYB3117805BSJ-60 HYB3117805BSJ-50 HB37805B

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BJ-60 HYB3117805BJ-70 HYB3117805BSJ-50- HYB3117805BSJ-70 HYB3117805BSJ-60 HYB3117805BSJ-50 HB37805B
OCR Text hyper Page Mode- EDO) Advanced Information * * * HYB3117805BSJ -50/-60/-70 2 097 152 words by 8-bit organization 0 to 70 C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time fro...
Description 2M x 8 - Bit Dynamic RAM 2k Refresh (hyper Page Mode- EDO)
From old datasheet system

File Size 255.79K  /  25 Page

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    HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805-50 HB17805C Q67100-Q1104 HYB5117805BSJ-50-60
OCR Text hyper Page Mode-EDO) Advanced Information * 2 097 152 words by 8-bit organization * 0 to 70 C operating temperature * hyper Page Mode-EDO-operation * Performance: -50 -60 60 15 30 104 25 HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 ...
Description 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (hyper Page Mode-EDO)
From old datasheet system

File Size 175.17K  /  23 Page

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    MIC23201YML

Micrel Semiconductor
Part No. MIC23201YML
OCR Text hyper speed control? hyper speed control is a trademark of micrel, inc. mlf and micro leadframe are registered trademark amkor technology inc. micrel inc. ? 2180 fortune drive ? san jose, ca 95131 ? usa ? tel +1 ( 408 ) 944-0800 ...
Description 2MHz PWM 2A Buck Regulator

File Size 860.80K  /  20 Page

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    M53230800DB0 M53230810DW0

Samsung Semiconductor
Part No. M53230800DB0 M53230810DW0
OCR Text ... Access time from CAS precharge hyper page mode cycle time CAS precharge time(hyper page cycle) RAS pulse width(hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description (M532308x0DB0/DW0) DRAM Module

File Size 435.16K  /  15 Page

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    M53230800CB0

Samsung Semiconductor
Part No. M53230800CB0
OCR Text ... Access time from CAS precharge hyper page mode cycle time CAS precharge time(hyper page cycle) RAS pulse width(hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description (M532308x0CB0/CW0) DRAM Module

File Size 428.44K  /  15 Page

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    ALLIANCE
Part No. AS4C1M16E5
OCR Text ...s RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time * 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write * TTL-compatible, three-state DQ * JEDEC standar...
Description 5V / 3.3V Edo DRAM, 16M, 1Mx16

File Size 467.96K  /  22 Page

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