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  hj-fet Datasheet PDF File

For hj-fet Found Datasheets File :: 107    Search Time::1.375ms    
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    California Eastern Laboratories
Part No. NE34018-TI-64-A NE34018-TI-63-A NE34018-A
OCR Text ...ornia eastern laboratories gaas hj-fet l to s band low noise amplifier (new plastic package) electrical characteristics (t a = 25 c) note: 1. typical values of noise figures and associated gain are those obtained when 50% of the devices ...
Description GaAs hj-fet L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

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    NE32400 NE24200

NEC[NEC]
Part No. NE32400 NE24200
OCR Text hj-fet CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain ma...
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet CHIP

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    NE32684A NE32684A-T1 NE32684AS

NEC
Part No. NE32684A NE32684A-T1 NE32684AS
OCR Text HJ FET NOT RECOMMENDED FOR NEW DESIGN NE32684A FEATURES * VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz Noise Figure, NF (dB) 1.2 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 GA m, WG = 200 m * ...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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    NE425S01 NE425S01-T1 NE425S01-T1B

NEC Corp.
NEC[NEC]
Part No. NE425S01 NE425S01-T1 NE425S01-T1B
OCR Text hj-fet DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. P...
Description C TO KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL hj-fet

File Size 55.97K  /  12 Page

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    NE32984D NE32984D-S NE32984D-SL NE32984D-T1

NEC
Part No. NE32984D NE32984D-S NE32984D-SL NE32984D-T1
OCR Text HJ FET FEATURES * VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz * HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz Noise Figure, NF (dB) 1.2 NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 1.0...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

File Size 47.41K  /  4 Page

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    D5002UK

Seme LAB
Part No. D5002UK
OCR Text ...nical data 12 3 4 a m f e d c b hj i g k gold metallised multi-purpose silicon dmos rf fet 40w ? 50v ? 175mhz single ended features  simplified amplifier design  suitable for broad band applications low c rss  simple bias circuits  lo...
Description ROHS COMPLIANT METAL GATE RF SILICON FET

File Size 58.38K  /  5 Page

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    NE32100001 NE321000

California Eastern Labs
Part No. NE32100001 NE321000
OCR Text HJ FET FEATURES * SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11 * GATE LEN...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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    UPG2118K UPG2118K-E3

ETC
Part No. UPG2118K UPG2118K-E3
OCR Text hj-fet TECHNOLOGY * SINGLE +3.2V POWER SUPPLY * HIGH EFFICIENCY: PAE = 42% MIN * HIGH SATURATED POWER: Pout = +31.5 dBm MIN * FLEXIBLE FREQUENCY RANGE * 20-PIN QFN PACKAGE: (4.15 X 4.15 X 0.9 mm) UPG2118K DESCRIPTION NEC's UPG2118K i...
Description NECs 1.5W GaAs MMIC POWER AMPLIFIER

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    NE24283B

NEC
Part No. NE24283B
OCR Text HJ FET NE24283B (SPACE QUALIFIED) FEATURES * VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz * HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz * GATE LENGTH: 0.25 m * GATE WIDTH: 200 m * HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOPT...
Description ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)

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