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POLYFET[Polyfet RF Devices]
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| Part No. |
F1020
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| OCR Text |
...OWER VDMOS TRANSISTOR 130 Watts gemini Package Style AR HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltag... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
39.77K /
2 Page |
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Aeroflite
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| Part No. |
BACC63XX
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| OCR Text |
... r i s e s, i n c. 261 gemini avenue, brea, ca 92821 high density, high reliability bacc63** connector s from souriau are av ailable in composite and stainless steel materials. the bacc63** connectors are designed for the har... |
| Description |
Connectors
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| File Size |
154.39K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1015
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| OCR Text |
...OWER VDMOS TRANSISTOR 100 Watts gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 专利金金属化硅栅增强型射频功率VDMOS晶体
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| File Size |
37.15K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1012
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| OCR Text |
...POWER VDMOS TRANSISTOR 80 Watts gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 290 Watts Junction to Case Thermal Resistance 0.6 o C/W Maximum Junction... |
| Description |
CIRCULAR MINI-DINS
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.44K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1008
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| OCR Text |
...POWER VDMOS TRANSISTOR 40 Watts gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 1.05 o C/W Maximum Junctio... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.41K /
2 Page |
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it Online |
Download Datasheet |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1007
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| OCR Text |
...POWER VDMOS TRANSISTOR 20 Watts gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.75 o C/W Maximum Junctio... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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| File Size |
37.50K /
2 Page |
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it Online |
Download Datasheet |
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