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Microsemi
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Part No. |
APT50GN60BDQ3G
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OCR Text |
...tage (v ge = 0v, i c = 4ma) gate threshold voltage (v ce = v ge , i c = 800 a, t j = 25c) collector-emitter on voltage (v ge =...igbt's have ultra low v ce(on) and are ideal for low frequency applications that require absolute ... |
Description |
IGBT w/ anti-parallel diode
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File Size |
231.31K /
9 Page |
View
it Online |
Download Datasheet
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Alpha & Omega Semiconductor
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Part No. |
AOTS40B65H1
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OCR Text |
...ctor current, limited by t jmax gate-emitter voltage t c =100c maximum junction-to-ambient thermal characteristics c/w 40 aoks40b65h1/aots40...igbt junction-to-case v units parameter absolute maximum ratings t a =25c unless otherwise noted ao... |
Description |
IGBT Discrete IGBTs
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File Size |
470.57K /
7 Page |
View
it Online |
Download Datasheet
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Alpha & Omega Semiconductor
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Part No. |
AOT10B60D
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OCR Text |
...or ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations. the soft co- package diode is target...igbt junction-to-case g c e top view aot10b60d g c e to-220 rev.1.0: nov 2013 www.aosmd.com ... |
Description |
IGBT with Anti-Parallel Diode IGBTs
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File Size |
667.63K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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