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  flash-erasable Datasheet PDF File

For flash-erasable Found Datasheets File :: 1514    Search Time::2.359ms    
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    W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90

Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
Part No. W27L02 W27L02P-70 W27L02P-90 W27L02Q-70 W27L02Q-90
OCR Text ... The other way is somewhat like flash, by programming two consecutive commands into the device and then enter Erase mode. The two commands are loading Data = AA(hex) to Addr. = 5555(hex) and Data = 10(hex) to Addr. = 2AAA(hex). Be careful t...
Description 256K X 8 ELECTRIC ALLY ERASABLE EPROM 256K X 8 EEPROM 12V, 70 ns, PQCC32

File Size 349.50K  /  15 Page

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    TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641-10 TC58FVT641-70 TC58FVT641FT-70 TC58FVB641FT-10 TC58FVB641FT-70 TC58FVB641XB-10 TC58FVB641XB-70
OCR Text ...M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. Th...
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 590.42K  /  53 Page

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    TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58F

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB641XB-10 TC58FVB641FT-70 TC58FVT641XB-70 TC58FVB641 TC58FVB641FT TC58FVB641FTXB-10 TC58FVB641FTXB-70 TC58FVT641XB-10
OCR Text ...M x 8 BITS / 4M x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words x 8 bits or as 4,194,304 words x 16 bits. Th...
Description 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY

File Size 586.97K  /  53 Page

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    KM29U128IT KM29U128T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM29U128IT KM29U128T
OCR Text Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1) Changed tPROG Parameter : 1ms(Max.) 500s(...erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the KM29...
Description 16M x 8 Bit NAND Flash Memory

File Size 479.05K  /  26 Page

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    TP28F001BX-B90 TP28F001BX-T90 TN28F001BX-B150 TN28F001BX-B90 TN28F001BX-T150 TN28F001BX-T90 TE28F001BX-B150 TE28F001BX-B

INTEL[Intel Corporation]
Part No. TP28F001BX-B90 TP28F001BX-T90 TN28F001BX-B150 TN28F001BX-B90 TN28F001BX-T150 TN28F001BX-T90 TE28F001BX-B150 TE28F001BX-B90 TE28F001BX-T150 TE28F001BX-T90 P28F001BX-B120 N28F001BX-B120 N28F001BX-B150 N28F001BX-B70 N28F001BX-B90 N28F001BX-T120 N28F001BX-T150 N28F001BX-T70 N28F001BX-T90 P28F001BX-T150 P28F001BX-T120 28F001BX-T E28F001BX-B120 E28F001BX-B70 E28F001BX-B90 E28F001BX-T120 E28F001BX-T150 E28F001BX-T70 E28F001BX-T90 P28F001BX-B150 P28F001BX-B70 P28F001BX-B90 P28F001BX-T70 P28F001BX-T90 E28F001BX-B150
OCR Text FLASH MEMORY 28F001BX-T 28F001BX-B 28F001BN-T 28F001BN-B Y High-Integration Blocked Architecture One 8 KB Boot Block w Lock Out Two 4 K...erasable blocks and integrating a state machine to control erase and program functions The specializ...
Description 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY

File Size 426.10K  /  33 Page

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    ATF16LV8C ATF16LV8C-10JC ATF16LV8C-10JI ATF16LV8C-10PC ATF16LV8C-10PI ATF16LV8C-10SC ATF16LV8C-10SI ATF16LV8C-10XC ATF16

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. ATF16LV8C ATF16LV8C-10JC ATF16LV8C-10JI ATF16LV8C-10PC ATF16LV8C-10PI ATF16LV8C-10SC ATF16LV8C-10SI ATF16LV8C-10XC ATF16LV8C-10XI ATF16LV8C-15JC ATF16LV8C-15JI ATF16LV8C-15PC ATF16LV8C-15PI ATF16LV8C-15SC ATF16LV8C-15SI ATF16LV8C-15XC ATF16LV8C-15XI ATF16LV8C-10
OCR Text .../O Pin Keeper Circuits Advanced Flash Technology - Reprogrammable - 100% Tested High Reliability CMOS Process - 20 Year Data Retention - 100...erasable Flash memory technology. Speeds down to 10 ns and a 5 A pin-controlled power down mode opti...
Description High Speed CMOS Logic Quad Buffers with 3-State Outputs 14-SOIC -55 to 125 FLASH PLD, 10 ns, PDSO20
High Speed CMOS Logic Quad Schmitt-Triggered 2-Input NAND Gates 14-PDIP -55 to 125 FLASH PLD, 15 ns, PDSO20
High- Performance EE PLD FLASH PLD, 10 ns, PQCC20
High Speed CMOS Logic Quad Schmitt-Triggered 2-Input NAND Gates 14-SOIC -55 to 125

File Size 214.65K  /  10 Page

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    ATF16V8CZ ATF16V8CZ-12JC ATF16V8CZ-12PC ATF16V8CZ-12SC ATF16V8CZ-12XC ATF16V8CZ-15JC ATF16V8CZ-15JI ATF16V8CZ-15PC ATF16

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. ATF16V8CZ ATF16V8CZ-12JC ATF16V8CZ-12PC ATF16V8CZ-12SC ATF16V8CZ-12XC ATF16V8CZ-15JC ATF16V8CZ-15JI ATF16V8CZ-15PC ATF16V8CZ-15PI ATF16V8CZ-15SC ATF16V8CZ-15SI ATF16V8CZ-15XC ATF16V8CZ-15XI
OCR Text .../O Pin Keeper Circuits Advanced Flash Technology Reprogrammable 100% Tested High Reliability CMOS Process 20 Year Data Retention 100 Erase/W...erasable Flash memory technology. Speeds down to 12 ns and a 25 A edge-sensing power down mode are o...
Description High Performance E2 PLD FLASH PLD, 15 ns, PQCC20

File Size 380.44K  /  10 Page

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