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				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KMM53216000CK KMM53216000CKG
OCR Text	...DRAM MODULE KMM53216000CK/CKG Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216000C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000C consists of eight ...
Description	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V 1,600 × 32的DRAM上海药物研究所利用16Mx4K的刷新，5V
File Size	392.73K / 20 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM53216000BK KMM53216000BKG
OCR Text	Fast Page Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216000B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216000B consists of eight CMOS 16Mx4bits DRAMs in SOJ pack...
Description	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
File Size	360.29K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KFG1G1612M-DEB5 KFG1G1612M-DED5 KFG1G16D2M-DEB5 KFG1G16D2M-DEB6 KFG1G16D2M-DED5 KFG1G16D2M-DED6 KFG1G16D2M-DID5 KFG1G16D2M-DID6 KFG1G16Q2M-DID5 KFG1G16Q2M-DID6 KFG1G16Q2M-DEB6 KFH1G16Q2M-DEB6 KFH1G16Q2M-DED6 KFG1G16D2M-DIB5 KFG1G16D2M-DIB6 KFG1G16Q2M-DIB5 KFG1G16Q2M-DIB6 KFG1G16U2M-DID5 KFG1G16U2M-DID6 KFG2G16D2M-DID5 KFG2G16D2M-DID6 KFG2G16Q2M-DID5 KFG4G1612M-DEB5 KFG4G1612M-DED5 KFG4G16D2M-DEB5 KFG4G16D2M-DEB6 KFG2G16D2M-DED5 KFH2G16D2M-DEB6 KFH2G16D2M-DEB5 KFH2G16D2M-DED5 KFH2G16D2M-DIB6 KFG2G16D2M-DEB5 KFG2G16D2M-DED6 KFG2G16D2M-DIB5 KFG2G16D2M-DIB6 KFG2G1612M-DEB5 KFG2G1612M-DED5 KFH1G1612M-DEB5 KFH1G1612M-DED5 KFW2G16D2M-DIB5 KFW2G1612M-DEB5 KFW2G16U2M-DID5 KFW4G16U2M-DID6 KFW4G16Q2M-DIB6 KFW4G16D2M-DIB6 KFW1G16U2M-DID5 KFW4G16Q2M-DEB5 KFG4G16D2M-DIB5 KFH1G16D2M-DIB6 KFH1G16D2M-DIB5 KFH4G16D2M-DIB5 KFG4G16D2M-DIB6 KFG1G16Q2M-DEB5 KFG2G16Q2M-DEB5 KFG4G16Q2M-DEB5 KFH1G16Q2M-DEB5 KFH1G16D2M-DEB5 KFG1G16U2M-DEB5 KFG1G16U2M-DEB6 KFG1G16U2M-DED5 KFG1G16U2M-DED6 KFG2G16U2M-DEB5 KFG2G16U2M-DEB6 KFG2G16U2M-DED5 KFG2G16U2M-DED6 KFG4G16U2M-DEB5 KFG4G16U2M-DEB6 KFG4G16U2M-DED5 KFW2G1612M-DED5 KFH2G1612M-DED5 KFH4G1612M-DED5 KFW4G1612M-DED5 KFW1G1612M-DED5 KFG1G16U2M-DIB5 KFG2G16Q2M-DIB5
OCR Text	... chart. Application Requires Fast Random Read Fast Sequential Read Fast Write/Program Multi Block Erase Erase Suspend/Resume Copyback Loc...Page Architecture 2 : 2KB Page Samsung OneNAND Memory Device Type G : Single Chip H : Dual Chip W...
Description	FLASH MEMORY(54MHz) FLASH MEMORY(66MHz)
File Size	1,620.41K / 125 Page	View it Online	Download Datasheet

				hitachi
Part No.	56A841 HB56A841BRSERIES
OCR Text	... mW (max) (HB56A441BR Series) * Fast page mode capability * Refresh period 2048 refresh cycles: 32 ms HB56A841BR Series, HB56A441BR Series * 3 variations of refresh RAS-only refresh CAS-before-RAS refresh Hidden refresh * TTL compat...
Description	From old datasheet system
File Size	444.46K / 30 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	XC68341FT25
OCR Text	... long-word aligned. 3. WE on Fast Termination On page 3-17, Figure 3-6, UWE and LWE do not assert for fast termination writes. 4. Write Cycle Timing Waveforms On page 3-25, the M68300 write cycle timing diagram (Figure 3-12) shows i...
Description	Integrated Processor Users Man
File Size	122.74K / 22 Page	View it Online	Download Datasheet

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