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Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products]
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Part No. |
AN644
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OCR Text |
... an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2mW from a 3V supply including the bias circuitry. Input return loss and isolation are -9dB and -20dB, respectively. I. Introduction ... |
Description |
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz QuickChip设计示例2低功耗硅晶体管的1.9GHz的低噪声放大
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File Size |
293.30K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
M6MGT160S2BVP M6MGB160S2BVP
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OCR Text |
...e memory W version Ta=-20 ~ 85C fabricated by CMOS technology for the peripheral circuit * Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144 bytes / ... |
Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
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File Size |
253.82K /
30 Page |
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it Online |
Download Datasheet
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