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  f-mos Datasheet PDF File

For f-mos Found Datasheets File :: 26634    Search Time::4.875ms    
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    UPD16510 UPD16510GR-8JG

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NEC[NEC]
NEC Corp.
Part No. UPD16510 UPD16510GR-8JG
OCR Text ... (substrate voltage) CCD 0.1 F SUB 1 M 1 0.1 F 2 3 4 SSG 5 SUB TG V1 V2 V3 V4 8 9 PG1 Bl1 PG2 Bl2 NC 13 12 11 0.1 F 6 7 TO1 VCC Tl1 VSS ...MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Ste...
Description VERTICAL DRIVER FOR CCD SENSOR

File Size 69.06K  /  16 Page

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    Microsemi
Part No. APT5028BVRG
OCR Text ...(541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com power mos v ? is a new generation of high voltage n-c...
Description MOSFET

File Size 47.88K  /  4 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3047
OCR Text f-mos FETs 2SK3047 Silicon N-Channel Power f-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s...
Description Silicon N-Channel Power f-mos FET

File Size 42.97K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3046
OCR Text f-mos FETs 2SK3046 Silicon N-Channel Power f-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 ...
Description Silicon N-Channel Power f-mos FET

File Size 44.25K  /  3 Page

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    Microsemi
Part No. APT20M11JFLL
OCR Text ... gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-...
Description FREDFETs

File Size 158.75K  /  5 Page

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    BD9152MUV BD9152MUV-E2

ROHM
Part No. BD9152MUV BD9152MUV-E2
OCR Text ...=en2=2v oscillation frequency f osc 0.8 1.0 1.2 mhz pch fet on resistance r onp 1 - 0.17 0.3 ? vcc=5v r onp 2 - 0.17 0.3 ? vcc=...mos fets incorporated as power transistor. on resistance of highside mos fet : 170m (typ.) o...
Description 4.5-5.5V 1.5A/1.5A 2ch Buck converter

File Size 476.09K  /  19 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3045
OCR Text f-mos FETs 2SK3045 Silicon N-Channel Power f-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 ...
Description Silicon N-Channel Power f-mos FET

File Size 44.10K  /  3 Page

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    Microsemi
Part No. APT50M60L2VRG
OCR Text ... gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn...
Description MOSFET

File Size 148.68K  /  5 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3044
OCR Text f-mos FETs 2SK3044 Silicon N-Channel Power f-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 ...
Description Silicon N-Channel Power f-mos FET

File Size 43.95K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. 2SK3043
OCR Text f-mos FETs 2SK3043 Silicon N-Channel Power f-mos FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = 30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 ...
Description Silicon N-Channel Power f-mos FET

File Size 44.70K  /  3 Page

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