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... r th(c-f) inverter igbt (per 1 element) (note-1) inverter fwdi (per 1 element) (note-1) brake igbt (note-1) brake fwdi (note-1) inverter igbt (per 1 element) (note-2) inverter fwdi (per 1 element) (note-2) brake igbt (note-2) brake ... |
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95.89K /
6 Page |
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...ceramic body and silver fusing element ? silver termination with nickel and pure-tin solder plating, providing excellent solderability ? standard eia 1206/eiaj3216 size ? compatible with both wave and reflow soldering processes ? ... |
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638.19K /
43 Page |
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CENTRONIC
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LD4C-5T
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...ad rants (values given are per element unless otherwise stated) active area (to t al) r e sp onsivity a/ w = 436 nm dark current (na) capacitance pf shunt r e sistance meg. ohms c r osstalk% = 900 nm type no. mm 2 m... |
| Description |
(LDxx-5T) General Purpose Silicon Sensors
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| File Size |
253.09K /
2 Page |
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Yea Shin Technology Co., Ltd
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| Part No. |
KBPC15005N
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| OCR Text |
...ward characterictics per bridge element 100 c u r r e n t , ( a ) load 5.0 0 0 50 25 single phase 10 al.finned plate 125 55 75 100 150 175 i n s t a n t a n e o u s r e v e r s e c u r r e n t , percent of rated peak reverse volt age,... |
| Description |
VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Ampere
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| File Size |
387.65K /
2 Page |
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... a forward voltage drop (per element) kbpc40 @i f = 20a kbpc50 @i f = 25a v fm 1.2 v peark reverse current @t c = 25c at rated dc blocking voltage @t c = 125c i rm 10 1.0 a ma wte power semiconductors kbpc kbpc... |
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49.31K /
4 Page |
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| OCR Text |
... a forward voltage drop (per element) kbpc40 @i f = 20a kbpc50 @i f = 25a v fm 1.1 v peark reverse current @t c = 25c at rated dc blocking voltage @t c = 125c i rm 5.0 500 a wte power semiconductors... |
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51.50K /
4 Page |
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| OCR Text |
... a forward voltage drop (per element) kbpc40 @i f = 20a kbpc50 @i f = 25a v fm 1.1 v peak reverse current at @t c = 25c rated dc blocking voltage (per element) @t c = 125c i r 5.0 500 a typical thermal r... |
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| File Size |
44.95K /
3 Page |
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Figaro
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| Part No. |
TGS2603
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| OCR Text |
... quality monitors the sensing element is comprised of a metal oxide semiconductor layer formed on an alumina substrate of a sensing chip together with an integrated heater. in the presence of a detectable gas, the sensor's cond... |
| Description |
detection of Odor and Air Contaminants
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| File Size |
302.35K /
2 Page |
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PANASONIC CORP
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| Part No. |
DN8797MS
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| OCR Text |
...n hall ic which includes a hall element, amplifier circuit, schmidt circuit, stabilized power supply and temperature compensation cir- cuit which are integrated on a single chip with a fine pat- terning technology. the magnetic input signal... |
| Description |
SPECIALTY ANALOG CIRCUIT, PDSO3
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| File Size |
337.77K /
11 Page |
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