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TY Semicondutor
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| Part No. |
AOT2606L
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| OCR Text |
...1 w t a =70c 1.3 t a =25c 2.1 p dsm a t a =25c i dsm 115 36.5 13 72 60 avalanche energy l=0.1mh c a t a =70c continuous drain current 180 i d w t c =25c c thermal characteristics parameter aot2606l/aob2606l aotf2606l v 2 0 gate-source volt... |
| Description |
Single N -Channel MOSFET
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| File Size |
477.76K /
7 Page |
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it Online |
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TY Semicondutor
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| Part No. |
AOT260L
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| OCR Text |
... 65 0.45 power dissipation a p dsm w t a =70c 330 1.2 t a =25c continuous drain current 819 20 128 avalanche energy l=0.1mh c w a t a =70c 500 pulsed drain current c continuous drain current g i d 140 110 t c =25c t c =100c drain-source... |
| Description |
Single N -Channel MOSFET
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| File Size |
378.50K /
6 Page |
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it Online |
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PHILIPS
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| Part No. |
TEA6101 TEA6101T TEA6101_T_CNV_2 TEA6101T/N2
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| OCR Text |
...OL VP CTRL AUDIN AUDOUT LID LIC dsm MODOUT Vref n.c. n.c. TEST NOAV LEAV MT OUT4 OUT3 OUT2 OUT1 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 PIN (1) (2) (3) (4) (5) (6) (7) (8) (9) - - (10) (11) (12) (13) (14) (15) (16) (17) (18) ... |
| Description |
TEA6101/T; Antenna diversity circuit
From old datasheet system
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| File Size |
62.57K /
13 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOL1401
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| OCR Text |
... unless otherwise noted i d a p dsm 2.08 power dissipation b t c =25c p d t c =100c maximum junction-to-ambient a steady-state c/w w t a =70c 1.3 junction and storage temperature range -55 to 175 power dissipation a t a =25c maximum junc... |
| Description |
P-Channel Enhancement Mode Field
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| File Size |
442.60K /
6 Page |
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it Online |
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TY Semicondutor
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| Part No. |
AOB256L
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| OCR Text |
... energy l=0.1mh c a t a =25c i dsm a t a =70c i d 19 13.5 t c =25c t c =100c 35 pulsed drain current c continuous drain current w power dissipation a p dsm w t a =70c 83 1.3 t a =25c t c =25c 2.1 41.5 t c =100c power dissipation b p d m... |
| Description |
Single N -Channel MOSFET
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| File Size |
709.78K /
6 Page |
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it Online |
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Alpha
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| Part No. |
AOL1400L
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| OCR Text |
...lanche current c 30 t a =25c p dsm 2.1 power dissipation b continuous drain current g t a =25c i dsm 17 t a =70c 13 85 70 a 200 a 100 t c =100c continuous drain current b maximum units parameter t c =25c g t c =100c b 30 c/w absolut... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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| File Size |
114.42K /
5 Page |
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it Online |
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