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  di-510 Datasheet PDF File

For di-510 Found Datasheets File :: 1807    Search Time::2.125ms    
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    ES3883

List of Unclassifed Manufacturers
ESS Technology
ETC
Electronic Theatre Controls, Inc.
Part No. ES3883
OCR Text ...RSTOUT_B DSC_C VCC TSD AUX7/VFD_DI AUX0 DSC_D0 AUX1 AUX2 TWS/SPLL_OUT DCLK/EXT_CLK AUX8/VFD_CLK AUX9/SQS0 DSC_S RESET_B MUTE MCLK TBCK VSS ...510) 492-1088 Fax: (510) 492-1898 4 No part of this publication may be reproduced, stored in a r...
Description Video CD Companion Chip Product Brief

File Size 37.22K  /  4 Page

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    IRLML5203

IRF[International Rectifier]
Part No. IRLML5203
OCR Text ... VGS = 0V TJ = 25C, I F = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on FR-4 board, t 5sec. Pulse width 400s; duty cycle 2%. 2 ww...
Description HEXFET Power MOSFET
Power MOSFET(Vdss=-30V)

File Size 135.20K  /  9 Page

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    LM335A LM135 LM135Z LM235Z LM235 LM335Z LM135AD LM135AZ LM135D LM235AD LM235AZ LM235D LM335 LM335AZ LM335D

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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. LM335A LM135 LM135Z LM235Z LM235 LM335Z LM135AD LM135AZ LM135D LM235AD LM235AZ LM235D LM335 LM335AZ LM335D
OCR Text DI .1 .OPERATESFROM450ATO5mA .LESSTHAN1DYNAMI RECTLY CALIBRATED IN oK o C INITIAL ACCURACY C IMPEDANCE Z TO92 (Plastic Package DES...510 10k 1 3 LF398 84 5 6 7 Output 10mV/K 2k m=1 +15V 1N457 0.1F -15V 1N4148 -15V SIMPLE TEM...
Description Precision Temperature Sensors(绮惧?娓╁害浼????
PRECISION TEMPERATURE SENSORS 高精度温度传感器

File Size 117.58K  /  11 Page

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    IRF7453

IRF[International Rectifier]
Part No. IRF7453
OCR Text ...A, VGS = 0V TJ = 25C, IF = 1.3A di/dt = 100A/s D S 2 www.irf.com IRF7453 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) ...
Description Power MOSFET(Vdss=250V, Id=2.2A)

File Size 163.18K  /  8 Page

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    IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF
OCR Text ...V TJ = 25C, IF = 34A, VDD = 30V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFZ44VZS_L 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10...
Description Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份证\u003d 57A条)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 294.94K  /  12 Page

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    2SK3355 2SK3355-S 2SK3355-Z 2SK3355-ZJ D14132EJ2V0DS00

NEC Corp.
NEC[NEC]
Part No. 2SK3355 2SK3355-S 2SK3355-Z 2SK3355-ZJ D14132EJ2V0DS00
OCR Text ...VGS = 0 V IF = 83 A, VGS = 0 V, di/dt = 100 A/s ID = 83 A , VDD = 48 V, VGS = 10 V ID = 42 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 TEST COND...510 510 170 28 46 0.99 64 130 1.5 39 MIN. TYP. 4.6 6.1 2.0 77 10 10 MAX. 5.8 8.8 2.5 UNIT m m V S ...
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system

File Size 77.92K  /  8 Page

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    BSO150N03

INFINEON[Infineon Technologies AG]
Part No. BSO150N03
OCR Text ... R GS=25 I D=9.1 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C 9.1 7.3 36 82 6 20 1.4 mJ kV/s V W C steady state 7.6 6.1 A Unit Rev. 1.11...510 67 5.3 4.0 21 3.0 1890 680 100 7.9 6.0 31 4.5 ns pF Values typ. max. Unit Reverse recovery ch...
Description Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual
OptiMOS2 Power-Transistor

File Size 222.25K  /  9 Page

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    MC74LVX244 MC74LVX244DT MC74LVX244DW MC74LVX244M ON1586

MOTOROLA[Motorola, Inc]
ON Semiconductor
Part No. MC74LVX244 MC74LVX244DT MC74LVX244DW MC74LVX244M ON1586
OCR Text ...or GND Vin = 5.5V or GND Test C di i T Conditions Parameter Parameter VCC V 3.6 3.6 3.6 2.0 3.0 3.0 2.0 3.0 3.0 2.0 3.0...510 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.010 0.012 0.004 0.009 0_ 7_ 0.395 0....
Description From old datasheet system
LOW-VOLTAGE CMOS

File Size 152.76K  /  6 Page

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    2N6071A 2N6075 2N6075A 2N6071 2N6075B 2N6071B 2N6073A 2N6073B 2N6071-D

ONSEMI[ON Semiconductor]
ETC
Part No. 2N6071A 2N6075 2N6075A 2N6071 2N6075B 2N6071B 2N6073A 2N6073B 2N6071-D
OCR Text ...ponential Waveform, Commutating di/dt = 2.0 A/ms *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. dv/d...510 Trigger devices are recommended for gating on Triacs. They provide: 1. Consistent predictabl...
Description From old datasheet system
Sensitive Gate Triacs Silicon Bidirectional Thyristors

File Size 119.61K  /  8 Page

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    2N6071 2N6071B 2N6073A 2N6073B 2N6075A 2N6075B ON0077 2N6071A

Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
Part No. 2N6071 2N6071B 2N6073A 2N6073B 2N6075A 2N6075B ON0077 2N6071A
OCR Text ... Open, ITM = 5.7 A, Commutating di/dt = 2.0 A/ms *Indicates JEDEC Registered Data. Symbol IDRM -- -- VTM VGT -- -- 1.4 1.4 2.5 2.5 -- -- -- ...510 QUADRANT DEFINITIONS MT2(+) QUADRANT II QUADRANT I Trigger devices are recommended for ga...
Description TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
From old datasheet system

File Size 115.85K  /  6 Page

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