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Wuxi NCE Power Semicond...
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Part No. |
NCE2025I
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OCR Text |
...general features v ds =20v,i d =25a r ds(on) <13m ? @ v gs =10v (typ:10.5m ? ) high density cell design for ultra low rdson ...251 top view package marking and ordering information device marking device device package... |
Description |
N-Channel Enhancement Mode Power MOSFET
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File Size |
340.63K /
7 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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Part No. |
STD607S
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OCR Text |
d units parameter 60 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 60v 48a 9.0 @ vgs=1...251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
112.89K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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