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New Jersey Semiconductor
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| Part No. |
2N4878
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| OCR Text |
... @ 1 0 /n a ? lo w outpu t capacitanc e c 0 u o <0.8p f ? hp matc h h j ? tigh t vg trackin g a ?v be ,-v b _ ; ? dietectricall y isolate d matche d pair s fo r differentia l amplifiers . absolut e maximu m rating s ?... |
| Description |
Trans GP BJT NPN 60V 4A 3-Pin TO-5
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| File Size |
108.40K /
2 Page |
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South Sea Semiconductor
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| Part No. |
SSM8405
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| OCR Text |
...5 12 7. 5 7. 5 ns p f s a input capacitanc e output capacitanc e reverse t ransfer capacitanc e c is s c oss c rs s v ds =15v v gs =0v f=1.0mhz 766 142 9 8 to tal gate charge q g v ds =15v 14 i d =6.6a, r ge n =3 1. 2 0. 8 2.3 4 v gs =0v... |
| Description |
Dual Enhancement Mode MOSFET
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| File Size |
282.89K /
10 Page |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1002
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| OCR Text |
...tion Curren Common Source Input capacitanc Common Source Feedback capacitanc Common Source Output capacitanc 1 1.6 0.7 11 66 8 40 MIN 65 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs =... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 专利金金属化硅栅增强型射频功率VDMOS晶体
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| File Size |
36.55K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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| Part No. |
F1004
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| OCR Text |
...tion Curren Common Source Input capacitanc Common Source Feedback capacitanc Common Source Output capacitanc 1 3.2 0.35 22 132 16 80 MIN 65 4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.2 A, Vgs = 0V Vgs = 0V Vg... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 专利金金属化硅栅增强型射频功率VDMOS晶体
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| File Size |
37.07K /
2 Page |
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it Online |
Download Datasheet |
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